Directed self-assembly and multi-beam take on new importance as the future of EUV lithography remains in limbo.

Is the long downturn finally at an end for used equipment vendors? And what does that mean for everyone else?

Planar approaches will have trouble scaling after 10nm due to floating gate issues; some companies may shift even sooner.

Progress has been made, but there’s still a lot of work to do over the next five years if the industry expects to meet its 2018 rollout schedule; economic benefits still being discussed.

Test is a big hurdle for stacking die. Technologies such as BiST are evolving to take up the slack.

Apple spearheads push to replace GaAS for RF front end, but how many foundries will the market support?

Last of three parts: Hybrid metrology; debate over directed self-assembly; new inspection tools; shrinking R&D dollars.

Move to multi-mode, multi-band power amps makes material change more attractive, raises significant threat for GaAs suppliers.

Double patterning is a necessity at 20nm, but it brings a number of new errors for the design team to deal with.

While different parts of the semiconductor industry have embraced 3D transistors and die, there are still huge gaps on the tools side.