In the late 1940’s, three physicists (Bardeen, Brattain and Shockley) invented the first transistor and were later awarded the Nobel Prize in 1956.
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High-performance applications pull for premium packaging solutions.
Extreme-ultraviolet lithography systems will be available to pattern critical layers of semiconductors at the 10-nanometer process node, and EUV will completely take over from 193nm immersion lithography equipment at 7nm, according to Martin van den Brink, president and chief technology officer of ASML Holding.
Virtual Roundtable provides perspective on the need for greater integration within the “fabless-foundry” ecosystem.
Intel has just announced that “Embedded Multi-die Interconnect Bridge (EMIB”) packaging technology will be available to 14nm foundry customers.
Hopes remain high for EUV, but long delays has caused attention to shift to various alternatives.
KLA-Tencor releases WaferSight PWG, LMS IPRO6, and K-T Analyzer 9.0 to control overlay and critical dimension (CD) in advanced IC fabs.
Lam’s CTO talks about the future of etch in beta-site tests.
The concern that there is a significant break between tools used by designers targeting leading edge processes, those at 32 nm and smaller to be precise, and those used to target older processes was dispelled during the recent Design Automation Conference (DAC).
Bit-growth slows while specialized stacking accelerates innovation in future memory solutions for communications, energy, and health-care.
Determining an optimum sampling strategy comes down to weighing the cost of process control against the benefit of capturing the defect or other excursion in a timely manner.
A leading semiconductor foundry and an EDA vendor with design-for-yield (DFY) solutions have enjoyed a long-term partnership. Recently, they worked together to leverage DFY technologies for process technology development and design flow enhancement.
Recovering and reusing materials is becoming an increasingly essential consideration in order to ensure consistent quality, a stable supply of materials, and lower costs. On- and off-site options are reviewed for helium, argon, sulfuric acid and Xenon.
Flexible displays is a technological field that has been in R&D and pre-commercial development for several years, but what needs to happen to make volume production a reality, in areas including substrates, materials and production processes? Semiconductor Manufacturing & Design discussed the issues with Mac McDaniel, Director and Chief Marketing Officer, Display Business Group, Applied Materials, Michael Ciesinski, MD of the Flextech Alliance, and Keri Goodwin, Principal Scientist from the Centre for Process Innovation (CPI), in the UK.
Devices used in safety critical applications such as automobiles need be known to work and have the ability to be regularly verified. Therefore, a very high-quality test is important as well as method to perform a built-in self-test.
Zvi Or-Bach, President and CEO of MonolithIC 3D, blogs that this is the “one learning” we can take away from IEDM 2013.
We report here empirical results demonstrating the electrical benefits of SOI-based FinFETs. There are benefits inherent in the elimination of dopant as the means to establish the effective device dimensions. However, significant compromise is unavoidable when using doping as a means of isolation, as in bulk-based FinFETs.
The electronics industry trend towards smaller and thinner form factors has ushered an era of significant changes in packaging materials. As these trends continue, innovative material solutions will be needed to address demanding requirements related to product integration, mobility, and reliability.
The process flows applied today for real product manufacturing are quite different from the process flows initially proposed for a universal 3D IC.
GLOBALFOUNDRIES, Open-Silicon and Amkor Technology have jointly exhibited a functional system-on-chip (SoC) solution on a 2.5D silicon interposer featuring two 28nm logic chips, with embedded ARM processors.
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The increasing demand for wireless data bandwidth and the emergence of LTE and LTE Advanced standards pushes radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance.
Everybody’s talking about it, but just what is DFM? According to various EDA company websites, design for manufacturing can be: generation of yield optimized cells; layout compaction; wafer mapping optimization; planarity fill; or, statistical timing among other definitions. Obviously, there is very little consensus. For me, DFM is what makes my job hard: Characterizing it, and developing tools for it, is the most important item on my agenda.
In nanometer designs, the number of single vias, and the number of via transitions with minimal overlap, can contribute significantly to yield loss. Yet doubling every via leads to other yield-related problems and has a huge impact on design size. While there is still concern over of how many vias can be fixed without rerouting and without creating DRC violations, the Calibre via doubling tool can identify via transitions and recommend areas for second via insertion without increasing area.
Certain measurement methodologies can be inaccurate even if they’re precise, and there are known errors associated with certain system parameters.
The etch loading effect is the dominant factor that impacts final CD control at advanced nodes with shrinking critical dimension.
A look at ways to simplify the optical and resist model calibration and to speed up the entire process.
Fabricating interconnects is one of the most process-intensive and cost-sensitive parts of manufacturing.
Testing interposer-based versions of stacked die and future versions using through-silicon vias.
EUV will introduce unwanted patterning distortions that must be accurately modeled and corrected.
How to tame data file sizes, address fractured data files creation and streamline data review techniques.