Piecing It Together
The move to 450mm wafers is under way, but nagging questions about ROI remain.…
DFM processes are no longer optional. They are now required by manufacturers to create efficient, high-performance chips…
ASN's All Things SOI
Guest blog by IBM: A look at process integration, device design, reliability, and product performance differences.…
The Foundry Files
The latest milestones and future trends for making MEMS a mainstream technology.…
Even ‘average’ is a good thing when it comes to wafer demand.…
Last week I identified the 4 energy bands that determined the effectiveness of windows; visible, solar near IR, re-radia…
The last day of the conference gave the tool updates. So how is EUV progressing?…
Edges Of Darkness
Why was Intel so successful when its very capable rivals were not? And can it maintain its lead?…
Strong 2nd half pulls 2013 finally into positive territory, 2014 growth in double digits.…
Riding the Silicon Rapids
With a more powerful source, lithographers can use less-sensitive resists that are less prone to pattern collapse.…
Tour grabs national headlines as President speaks out on jobs and manufacturing.…
- Mike Clayton: Multi-beam direct write is decades off vs never, due to well documented roadblocks, in my opinion. EUV...
- Chris Schuermyer: I wonder what Noonen means by “20nm will be a fast ramp,”. Is that because of the ability to...
- mark: EV Group, Nanonex, MII, Obducat and Suss are among the players in the nanoimprint market. Some NIL vendors...
- Diogenes Cicero: Dr. Gotkis, The two statements in your note above are clearly not in “absolute...
- Kent Dahlgren: “Outside of programmable logic devices (PLDs), isn’t everybody of significance already using...
FinFETs On SOI
What's changing at the leading edge of Moore's Law and why those changes are so important.
Year-to-year comparisons look dire everywhere but Taiwan, but sequential numbers look much better.
Following a disappointing period in the first quarter of this year, IHS plans to lower its chip forecast to 4.8% for 2013, down from 5.6% in the previous forecast.
EUV will introduce unwanted patterning distortions that must be accurately modeled and corrected.
How to tame data file sizes, address fractured data files creation and streamline data review techniques.
Enabling 12 technology nodes in 12 years.
Best practices for tackling electrical, physical and manufacturing challenges.
Decreasing time to yield requires planning for what patterns to generate, what data to archive and hot to optimize your test program.
A look at how to reduce custom/AMS design cycle time while improving design quality with on-demand, in-design signoff-quality verification.
Double patterning marks a turning point in terms of lithography, variability and complexity.
A look at the challenges and various solutions using LELE at 20nm, including place and route effects, OPC and mask misalignment and image rounding.
Getting more functionality on the same die area using more and increasingly complex verification rules is getting more difficult. Here are some solutions.
At 15nm and beyond, printing of pitches of 64nm and below will be required, and for EUV to replace ArF multi-exposure approaches patterns will have to be printed in a single-exposure process.