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Posts Tagged ‘dielectric’

Picosun and Hitachi MECRALD Process

Friday, February 24th, 2017


By Ed Korczynski, Sr. Technical Editor

A new microwave electron cyclotron resonance (MECR) atomic layer deposition (ALD) process technology has been co-developed by Hitachi High-Technologies Corporation and Picosun Oy to provide commercial semiconductor IC fabs with the ability to form dielectric films at lower temperatures. Silicon oxide and silicon nitride, aluminum oxide and aluminum nitride films have been deposited in the temperature range of 150-200 degrees C in the new 300-mm single-wafer plasma-enhanced ALD (PEALD) processing chamber.

With the device features within both logic and memory chips having been scaled to atomic dimensions, ALD technology has been increasingly enabling cost-effective high volume manufacturing (HVM) of the most advanced ICs. While the deposition rate will always be an important process parameter for HVM, the quality of the material deposited is far more important in ALD. The MECR plasma source provides a means of tunable energy to alter the reactivity of ALD precursors, thereby allowing for new degrees of freedom in controlling final film properties.

The Figure shows the MECRALD chamber— Hitachi High-Tech’s ECR plasma generator is integrated with Picosun’s digitally controlled ALD system—from an online video ( describing the process sequence:

1.  first precursor gas/vapor flows from a circumferential ring near the wafer chuck,

2.  first vacuum purge,

3.  second precursor gas/vapor is ionized as it flows down through the ECR zone above the circumferential ring, and

4.  second vacuum purge to complete one ALD cycle (which may be repeated).

Cross-sectional schematic of a new Microwave Electron Cyclotron Resonance (MECR) plasma source from Hitachi High-Technologies connected to a single-wafer Atomic Layer Deposition (ALD) processing chamber from Picosun. (Source: Picosun)

The development team claims that MECRALD films are superior to other PEALD films in terms of higher density, lower contamination of carbon and oxygen (in non-oxides), and also show excellent step-coverage as would be expected from a surface-driven ALD process. The relatively density of these films has been confirmed by lower wet etch rates. The single-wafer process non-uniformity on 300mm wafers is claimed at ~1% (1 sigma). The team is now exploring processes and precursors to be able to deposit additional films such as titanium nitride (TiN), tantalum nitride (TaN), and hafnium oxide (HfO). In an interview with Solid State Technology, a spokesperson from Hitachi High-Technologies explained that, “We are now at the development stage, and the final specifications mainly depend on future achievements.”

The MECR source has been used in Hitachi High-Tech’s plasma chamber for IC conductor etch for many years, and is able to generate a stable high-density plasma at very low pressure (< 0.1 Pa). MECR plasmas provide wide process windows through accurate plasma parameter management, such as plasma distribution or plasma position control. The same plasma technology is also used to control ions and radicals in the company’s dry cleaning chambers.

“I’m really impressed by the continuous development of ALD technology, after more than 40 years since the invention,” commented Dr. Tuomo Suntola, and the famous inventor and patentor of the Atomic Layer Deposition method in Finland in 1974, and member of the Picosun board of directors. “Now combining Hitachi and Picosun technologies means (there is) again a major breakthrough in advanced semiconductor manufacturing.”

MECRALD chambers can be clustered on a Picosun platform that features a Brooks robot handler. This technology is still under development, so it’s too soon to discuss manufacturing parameters such as tool cost and wafer throughput.


Silicon Technology Extensions shown at MRS Spring 2015

Monday, June 1st, 2015

By Ed Korczynski, Sr. Technical Editor, Solid State Technology/SemiMD

In the spring meeting of the Materials Research Society held recently in San Francisco, Symposium A: Emerging Silicon Science and Technology included presentations on controlling the structure of crystalline spheres and thin-films. Such structures could be used in future complementary metal-oxide semiconductor (CMOS) devices and in photonic circuits built using silicon.

Alexander Gumennik, et al., from the Massachusetts Institute of Technology, presented on “Extraordinary Stress in Silicon Spheres via Anomalous In-Fiber Expansion” as a way to control the bandgap of silicon and thus enable the use of silicon for photodetection at higher wavelengths. A silica fiber with a crystalline silicon core is fed through a flame yielding spherical silicon droplets via capillary instabilities. Upon cooling the spheres solidify and expand against the stiff silica cladding generating high stress conditions. Band gap shifts of 0.05 eV to the red (in Si) are observed, corresponding to internal stress levels. These stress levels exceed the surface stress as measured through birefringence measurements by an order of magnitude, thus hinting at a pressure-focusing mechanism. The effects of the solidification kinetics on the stress levels reached inside the spheres were explored, and the experimental results were found to be in agreement with a pressure-focusing mechanism arising from radial solidification of the spheres from the outer shell to the center. The simplicity of this approach presents compelling opportunities for the achievement of unusual phases and chemical reactions that would occur under high-pressure high-temperature conditions, which therefore opens up a pathway towards the realization of new in-fiber optoelectronic devices.

Fabio  Carta and others from Columbia University working with researchers from IBM showed results on “Excimer Laser Crystallization of Silicon Thin Films on Low-K Dielectrics for Monolithic 3D Integration.” This research supports the “Monolithic 3D” (M3D) approach to 3D CMOS integration as popularized by CEA-LETI, as opposed to the used of Through Silicon Vias (TSV). M3D requires processing temperature below 400°C if copper interconnects and low-k dielectric will be used in the bottom layer. Excimer laser crystallization (ELC) takes advantage of a short laser pulse to fully melt the amorphous silicon layer without allowing excessive time for the heat to spread throughout the structure, achieving large grain polycrystalline layer on top of temperature sensitive substrates. The team crystallized 100nm thick amorphous silicon layers on top of SiO2 and SiCOH (low-k) dielectrics. SEM micrographs show that post-ELC polycrystalline silicon is characterized by micron-long grains with an average width of 543 nm for the SiO2 sample and 570 nm for the low-k samples. A 1D simulation of the crystallization process on a back end of line structure shows that interconnect lines experience a maximum temperature lower than 70°C for the 0.5 μm dielectric, which makes ELC on low-k a viable pathway for achieving monolithic integration.

Seiji  Morisaki, et al., from Hiroshima Univ, showed results for “Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit.” The researchers used micro-thermal-plasma-jet (µ-TPJ) for zone melting recrystallization (ZMR) of amorphous silicon (a-Si) films to form lateral grains larger than 60 µm. By applying ZMR on a-Si strip patterns with widths <3 µm, single liquid-solid interfaces move inside the strips and formation of random grain boundaries (GBs) are significantly suppressed. Applying such strip patterns to active channels of thin-film-transistors (TFTs) results in a demonstrated field effect mobility (µFE) higher than 300 cm2/V*s because they contain minimal grain-boundaries. These a-Si strip pattern were then used to characteristic variability of n- and p-channel TFTs and CMOS ring oscillators. The strip patterns showed improved uniformities and defect densities, in general. A 9-stage ring oscillator fabricated with conventional TFTs had a maximum frequency (Fmax) of operation of 58 MHz under supply voltage (Vdd) of 5V which corresponds to a 1-stage delay (τ) of 0.94 ns, while strip channel TFTs demonstrated 108 MHz Fmax and τ decreased to 0.52 ns.

Ebrahim  Najafi, et al., from the California Institute of Technology, showed how “Ultrafast Imaging of Carrier Dynamics at the p-n Junction Interface” based on scanning ultrafast electron microscopy (SUEM) combines the spatial resolution of an electron probe with the temporal resolution of an optical pulse to enable unprecedented studies of carrier dynamics in spatially complex geometries. Observing the behavior of carriers in both space and time provides direct imaging of carrier excitation, transport, and recombination in the silicon p-n junction and the ability to follow their spatiotemporal behavior. Carrier separation on the surface of the p-n junction extends tens of microns beyond the depletion layer, as explained by a model using a ballistic-type transport. With the invention of SUEM, it should now be possible to study density profiles and electric potentials at surfaces and interfaces at the ultrafast time scale with the spatial resolution of the electron probe.

As a reminder, the Call For Paper for the MRS Fall 2015 meeting closes on June 18.