Microsoft to Join 3D TSV DRAM Consortium
The Hybrid Memory Cube Consortium (HMCC) — the 3D DRAM effort led by Micron Technology Inc. and Samsung Electronics Co. Ltd. — said that software giant Microsoft Corp. has joined the group.
Last October, memory rivals Samsung and Micron announced the creation of a consortium to develop an open interface specification for a 3D memory technology called the Hybrid Memory Cube (HMC). The HMCC is developing 3D DRAM devices based on through-silicon-via (TSV) technology.
Members of the consortium include Micron, Samsung, Altera, Open-Silicon, Xilinx, IBM and now Microsoft. The technology will enable 3D memory solutions for applications ranging from industrial products to high-performance computing and large-scale networking.
“HMC technology represents a major step forward in the direction of increasing memory bandwidth and performance, while decreasing the energy and latency needed for moving data between the memory arrays and the processor cores,” said K.D. Hallman, general manager of Microsoft’s Strategic Software/Silicon Architectures group.
Last year, Micron disclosed the manufacturing flow for the HMC. Under the plan, IBM will manufacture the controller logic portions of the HMC within its own fab. Micron will make the memory portions – and will assemble and test – the HMC devices within its own operations. Micron has recently set up a 3D DRAM pilot and production line within its 300mm R&D fab in Boise, Ida.
Sandia National Laboratories is developing a supercomputer as part of a DARPA program. In the short term, the lab has found a memory solution for the system: Micron’s HMC.
