Posts Tagged ‘TSMC’
Mentor Graphics Corp. (NASDAQ: MENT) announced that TSMC and Mentor Graphics have reached the first milestone of their collaboration on 10nm EDA certification. Calibre® physical verification and design for manufacturing (DFM) platform, and the Analog FastSPICE™ (AFS™) Circuit Verification Platform, including AFS Mega, are certified by TSMC based on the most current version of 10nm design rules and SPICE models. New tool feature enhancement based on 10nm process requirements has been made in Olympus-SoC™ digital design platform with TSMC validation, and certification of full chip integration is actively on-going. In addition to 10nm, Mentor has also completed 16FF+ version 1.0 certification of the Calibre, Olympus-SoC and AFS platforms. These certifications provide designers with the earliest access to signoff technology optimized for TSMC’s most advanced process nodes, with improved performance and accuracy.
“The long-term partnership we have with Mentor Graphics enables us to work closely from the earliest phases of technology development so we can have production ready design kits and software available for our customers concurrently with the announcement of new process offerings,” said Suk Lee, TSMC Senior Director, Design Infrastructure Marketing Division. “Mentor’s design solutions have successfully met the accuracy and compatibility requirements for TSMC 10nm FinFET technology, so customers can initiate their designs with accurate verification solutions.”
The Analog FastSPICE Platform provides fast circuit verification for nanometer analog, RF, mixed-signal, memory, and custom digital circuits. For large circuits the AFS Platform also delivers high capacity and fast mixed-signal simulation. For embedded SRAM and other array-based circuits, AFS Mega delivers highly accurate simulation results.
As circuit reliability remains a focus, Mentor and TSMC have enhanced the Calibre PERC™ product offering in 10nm to ensure that design and IP development teams have robust verification solutions for identifying sources of electrical error. Additionally, the Calibre xACT™ extraction suite includes updated models to deliver more accurate results to fulfill tighter accuracy requirements of 10nm.
For TSMC’s 16FF+ 1.0 Calibre design kit release, the Calibre team has worked with TSMC to speed up DRC performance by 30% on average. In addition, TSMC and Mentor released new filling use models that will improve first-pass fill runs, making ECO changes easier and faster. The new fill methodology will also help ensure consistent cycle times during post fill verification.
“Because Mentor and TSMC work together from the earliest stages of design rule development for a new process node, we learn what the new design and verification challenges are right along with TSMC.” said Joseph Sawicki, vice president and general manager of the Design to Silicon division at Mentor Graphics. “This gives us the ability to have the most advanced capabilities in place for ecosystem early adopters, and to continue to optimize performance as the new process moves to full production status.”
By Jeff Dorsch, contributing editor
The two main camps in optical lithography are arrayed for battle at the SPIE Advanced Lithography Symposium in San Jose, Calif.
Extreme-ultraviolet lithography, on one side, is represented by ASML Holding, its Cymer subsidiary, and ASML’s EUV customers, notably Intel, Samsung Electronics, and Taiwan Semiconductor Manufacturing.
On the other side is 193i immersion lithography, represented by Nikon and its customers, which also include Intel and other leading chipmakers.
There are other lithography technologies being discussed at the conference, of course. They are bit players in the drama, so to speak, although there is a lot of discussion and buzz about directed self-assembly technology this week.
ASML broke big news on Tuesday morning, reporting that Taiwan Semiconductor Manufacturing was able to expose more than 1,000 wafers in one day this year with ASML’s NXE:3300B EUV system. “During a recent test run on an NXE:3300B EUV system we exposed 1,022 wafers in 24 hours with sustained power of over 90 watts,” Anthony Yen, TSMC’s director of research and development, said at SPIE.
While ASML was obviously and justifiably proud of this milestone, after achieving its 2014 goal of producing 500 wafers per day, it cautioned that more development remains for EUV technology.
“The test run at TSMC demonstrates the capability of the NXE:3300B scanner, and moves us closer to our stated target of sustained output of 1,000 wafers per day in 2015,” ASML’s Hans Meiling, vice president service and product marketing EUV, said in a statement. “We must continue to increase source power, improve system availability, and show this result at multiple customers over multiple days.”
The day before, Cymer announced the first shipment of its XLR 700ix light source, which is said to improver scanner throughput and process stability for manufacturing chips with 14-nanometer features. The company also debuted DynaPulse as an upgrade option for its OnPulse customers. The XLR 700ix and DynaPulse together are said to offer better on-wafer critical dimension uniformity and provide stable on-wafer performance.
Another revelation at SPIE is that SK Hynix has been working with the NXE:3300, too, and is pleased with the system’s capabilities. According to Chang-Moon Lim, who spoke Monday morning, SK Hynix was recently able to expose 1,670 wafers over three days, with uptime of 86.3 percent over that period.
“Progress has been significant on various aspects, which should not be overshadowed by the delay of [light] sources,” he said of ASML’s EUV systems.
The Korean chipmaker is exploring how it could work without pellicles on the EUV reticle, Lim noted. ASML has been developing a pellicle, made with polycrystalline silicon, in cooperation with Intel and others.
Nikon Precision and other Nikon subsidiaries didn’t issue any press releases at SPIE. The companies presented much information at Sunday’s LithoVision 2015 event, held at the City National Civic auditorium, across the street from the San Jose Convention Center, where SPIE Advanced Lithography is staged.
On offer at the Nikon conference was the claimed superiority of 193i immersion lithography equipment to EUV systems for the 14nm, 7nm and future process nodes. Donis Flagello, Nikon Research Corp. of America’s president, CEO, and chief operating officer, emphasized that message on Tuesday morning with an invited paper on “Evolving optical lithography without EUV.”
Nikon’s champion machine is the NSR-S630D immersion scanner, which was touted throughout the LithoVision event. The system is capable of exposing 250 wafers per hour, according to Nikon’s Yuichi Shibazaki.
Ryoichi Kawaguchi of Nikon told attendees, “EUV lithography needs more stability and improvement.” He also brought up the topic of manufacturing on 450-millimeter wafers, which has mostly gone ignored in the lithography competition. Nikon will ship a 450mm system this spring to the Global 450 Consortium in Albany, N.Y., Kawaguchi said. The bigger substrates could provide “an alternative option to reduce cost,” he added.
Erik Byers of Micron Technology observed, “EUV is not a panacea.”
Which lithography technology will prevail in high-volume manufacturing? The question may not be definitively answered for some time.
Scott McGregor, President and CEO of Broadcom, sees some major changes for the semiconductor industry moving forward, brought about by rising design and manufacturing costs. Speaking at the SEMI Industry Strategy Symposium (ISS) in January, McGregor said the cost per transistor was rising after the 28nm, which he described as “one of the most significant challenges we as an industry have faced.” Pete Singer reports.
Matthew Hogan, Mentor Graphics writes a tongue-in-cheek blog about IP, saying chip designers need only to merely insert the IP into the IC design and make the necessary connections. Easy-peasey! Except…robust design requires more than verifying each separate block—you must also verify that the overall design is robust. When you are using hundreds of IPs sourced from multiple suppliers in a layout, how do you ensure that the integration of all those IPs is robust and accurate?
Dick James, Senior Analyst at Chipworks IEDM blogs that Monday was FinFET Day. He highlights three finFET papers, by TSMC, Intel, and IBM.
A research team led by folks at Cornell University (along with University of California, Berkeley; Tsinghua University; and Swiss Federal Institute of Technology in Zurich) have discovered how to make a single-phase multiferroic switch out of bismuth ferrite (BiFeO3) as shown in an online letter to Nature. Ed Korczynski reports.
SEMI praised the bipartisan effort in the United States Congress to pass the Revitalize American Manufacturing and Innovation (RAMI) Act as part of the year-end spending package. Since its introduction in August 2013, SEMI has been a champion and leading voice in support of the bill that would create public private partnerships to establish institutes for manufacturing innovation.
Phil Garrou takes a look at some of the key presentations at the 2014 IEEE 3DIC Conference recently held in Cork, Ireland.
Adele Hars writes that there were about 40 SOI-based papers presented at IEDM. In Part 1 of ASN’s IEDM coverage, she provides a rundown of the top SOI-based advanced CMOS papers.
Karen Lightman of the MEMS Industry Group says power is the HOLY GRAIL to both the future success of wearables and IoT/Everything. Power reduction and management through sensor fusion, power generation through energy harvesting as well as basic battery longevity. It became very clear from conversations at the MIG conference as well as in talking with folks on the CES show floor that the issue of power is the biggest challenge and opportunity facing us now.
In order to keep pace with Moore’s Law, semiconductor market leaders have had to adopt increasingly challenging technology roadmaps, which are leading to new demands on electronic materials (EM) product quality for leading-edge chip manufacturing. Dr. Atul Athalye, Head of Technology, Linde Electronics, discusses the challenges.
Maybe, just maybe, ASML Holding N.V. (ASML) has made the near-impossible a reality by creating a cost-effective Extreme Ultra-Violet (EUV @ ~13.5nm wavelength) all-reflective lithographic tool. The company has announced that Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) has ordered two NXE:3350B EUV systems for delivery in 2015 with the intention to use those systems in production. In addition, two NXE:3300B systems already delivered to TSMC will be upgraded to NXE:3350B performance. While costs and throughputs are conspicuously not-mentioned, this is still an important step for the industry.
The good and the great of the electron device world will make their usual pilgrimage to San Francisco for the 2014 IEEE International Electron Devices Meeting. Dick James of Chipworks writes that it’s the conference where companies strut their technology, and post some of the research that may make it into real product in the next few years.
The 4th Annual Global Interposer Technology Workshop at GaTech gathered 200 attendees from 11 countries to discuss the status of interposer technology. It has become the one meeting where you can find all the key interposer layers including those representing glass, laminate and silicon, blogs Phil Garrou.
Sharon C. Glotzer and Nicholas A. Kotov are both researchers at the University of Michigan who were just awarded a MRS Medal at the Materials Research Society (MRS) Fall Meeting in San Francisco for their work on “Integration of Computation and Experiment for Discovery and Design of Nanoparticle Self-Assembly.”
In order to keep pace with Moore’s Law, semiconductor market leaders have had to adopt increasingly challenging technology roadmaps, which are leading to new demands on electronic materials (EM) product quality for leading-edge chip manufacturing. Dr. Atul Athalye, Head of Technology, Linde Electronics, discusses the challenges.
ST further accelerates its FD-SOI ROs* by 2ps/stage, and reduces SRAM’s VMIN by an extra 70mV. IBM shows an apple-to-apple comparison of 10nm FinFETs on Bulk and SOI. AIST improves the energy efficiency of its FPGA by more than 10X and Nikon shows 2 wafers can be bonded with an overlay accuracy better than 250nm. Adele Hars reports.
Does your design’s interconnect have high enough wire width to withstand ESD? Frank Feng of Mentor Graphics writes in his blog that although applying DRC to check for ESD protection has been in use for a while, designers still struggle to perform this check, because a pure DRC approach can’t identify the direction of an electrical current flow, which means the check can’t directly differentiate the width or length of a wire polygon against a current flow.
At the recent IMAPS conference, Samsung electro-mechanics compared their Plated Mold Via Technology (PMV) to the well known Amkor Through Mold Via (TMV) technology. The two process flows are compared. Phil Garrou reports.
By Ed Korczynski, Sr. Technical Editor, Solid State Technology and SemiMD
The “Internet of Things” (IoT) has been seen as the next major market that will demand high volumes of integrated circuits (IC). The IoT can be loosely defined as a network of small, low-cost, ubiquitous electronic devices where sensing data and communicating information occurs without direct human intervention. Each device would function as a “smart node” in the network by doing some low-level signal processing to filter signals from noise, and to reduce the bandwidth needed for node-to-node communications. The nodes will need to communicate up to some manner of a “cloud” for secure memory storage and to bounce actionable information down to humans.
Figure 1 shows a conservative forecast of the global IoT market that was recently published by IDC. IDC expects the worldwide IoT installed base to experience a compound annual growth rate (CAGR) of 17.5% from 2013 to 2020, starting from 9.1 billion smart nodes installed at the end of 2013 and growing to 28.1 billion units by 2020.
Due to the anticipated elastic-demand for IoT devices that would come from cost reductions, the forecasts for the number of IoT nodes ranges to 50 billion or even 80 billion by the year 2020, as documented in the recent online Pete’s Post “Don’t Hack My Light Bulb, Bro”. The post also provides an excellent overview of recent discussions regarding the host of additional technology and business challenges associated with the enterprise infrastructure and security issues surrounding the integration of vast streams of new information.
As shown in Figure 1, the smart nodes form the foundation for the whole IoT. Consequently, the world will need low-cost high-volume manufacturing (HVM) technologies to create the different functionalites needed for smart nodes. Sensor- and logic-technologies to enable IoT smart nodes will generally evolve from existing IC applications, while R&D continues in Radio Frequency (RF) communications and in Micro Electro-Mechanical Systems (MEMS) energy harvesting.
IoT smart-nodes will use wireless RF technologies to communicate between themselves and with the “cloud.” In support of rapid growth in the 71-86 GHz RF “E-band” telecom backhaul segment—which transports data from cell sites in the peripheral radio access network (RAN) to the wireless packet core—Presto Engineering recently announced a non-captive production-scale testing service for 50µm-thin gallium arsenide wafers.
Silicon-On-Insulator (SOI) substrate supplier Soitec has excellent perspective on the global market for RF chips, since it’s High-Resistivity SOI (HR-SOI) wafers are widely used in commercial fabs. Bernard Aspar, senior vice president and general manager of the Communications and Power business unit of Soitec, explained to SemiMD in an exclusive interview why the market for RF chips is growing rapdily. RF front-end module unit sales are forecasted to increase at a CAGR of ~16% over the period of 2013-2017, while the area of silicon needing to be delivered could actually increase at ~30% CAGR. RF chips are increasing in average size due to the need to integrate multiple standards for wireless communications and multiple antenna switches. “The first components to be integrated in silicon were the antenna switches, moving from 70% on GaAs in 2010 to more than 80% on SOI in 2014,“ said Aspar.
Soitec claims that >80% of smart-phones today use an RF chip built on a wafer from the company, based on sales last year of >300k 200mm HR-SOI wafers. Due to anticipated future growth in RF demand, the company has plans to eventually move HR-SOI production to 300mm diameter wafers. Most of the anticipated demand will be for the company’s new variant of HR-SOI called eSI (“enhanced Signal Integrity”previously called “Trap Rich”) with a measured effective resistivity as high as 10 kOhm-cm for improved device performance.
This high-resistivity characteristic, which is conserved after a full CMOS process, translates to very low RF insertion loss (< 0.15 dB/mm at 1 GHz) and purely capacitive crosstalk similar to quartz substrates. HR-SOI substrates in general demonstrate reduced harmonics compared with standard SOI substrates, and the eSI wafers reduce harmonics to the point that they can be considered as lossless. Soitec was recently given a Best Partnership Award by Sony Semiconductor for supplying RF substrates.
“We’re also adding value to the substrate because it allows for simplification of the fab processing,” said Aspar. The eSI wafers enable much higher linearity and isolation, helping designers to address some of the most advanced LTE requirements at competitive costs. These substrates also provides benefits for the integration of passives, such as the quality factor of spiral inductors or tunable MEMS capacitors.
Vibrational Energy Harvesting
IoT smart nodes will need electrical power to function, and batteries that must be replaced or charged by an external source create issues for ubiquitous always-on small devices. In principle the ambient energies of the environment can be harvested to power smart nodes, and to do so we may consider using thermoelectric, photovoltaic, and piezoelectric properties of thin-films. Thermoelectric and photovoltaic devices both require somewhat specialized ambients for efficient energy harvesting, while piezoelectric devices can extract energy from subtle vibrations almost anywhere in the world (Fig. 2).
Researchers in the Energy Harvesting and Mechatronics Research Lab at Stony Brook University, New York, recently published an excellent overview of the potential for 1 W to 100 kW piezoelectronic energy harvesting in building, automobiles, and wearables electronics in the Journal of Intelligent Material Systems and Structures 24(11) 1405-1430. However, the largest forecasted growth in the IoT is for small devices that would consume µW to mW of active power.
For low-cost and low-power consumption, the logic chips for IoT smart nodes are expected to be made using a 65nm “trailing edge” fab process. For example, CAST Inc. has developed a 32-bit BA20 embedded processor core that can deliver 3.41 CoreMarks/MHz at a maximum frequency of 75 MHz. Using TSMC’s 65nm Low Power fab process, it occupies only 0.01 mm2 of silicon area while consuming 2 µW/MHz. Thus, at maximum speed the chip core would consume just 150µW.
MicroGen Systems, Inc. (MicroGen) is a privately held company developing thin piezoelectric energy harvesters, based on technology from Cornell University’s NanoScale Science and Technology Facility. Founded in 2007, MicroGen has headquarters and R&D in the Ithaca and Rochester, NY areas, and volume manufacturing with X-FAB in Itzehoe, Germany. Figure 3 shows one of the company’s ~100 mm2 area chips featuring an aluminum nitride (AlN) peizoelectric thin-film on a cantilever that produces alternating current (AC) electricity in response to external vibrations. Different cantilever designs allow for harvesting energy from either single-frequency or broadband vibrations. At resonance the AC power output is maximized, so it can be ~100 µW at 120Hz and 0.1g, or ~900 µW at 600Hz and 0.5g.
For any piezoelectric energy harvester there are basic materials properties that must be optimized, including the piezoelectric strain constant as well as the electromechanical coupling factor of the thin-film to the moving mass. Lead-zirconium-titanate (PZT) has been the most studied piezoelectric thin-film due to high strain constant and ability to couple to a substrate though the use of buffer layers.
S. H. Baek, et al. showed “Piezoelectric MEMS with Giant Piezo Actuation” in Science 18 November 2011, Vol 344 using lead-manganese-niobate with lead-titanate (PMN-PT) layers epitaxially grown on a strontium-titanate (STO) buffer layer over 4°-off-axis(001)Si. Figure 4 shows both the transverse piezoelectric coefficient (C/m2) and the energy-harvesting figure of merit (GPa) for this and other thin-films. Note that to acheive stable “giant” piezoelectric effects the PMN-PT layer had to be grown epitaxially with precise control over the STO grain orientation.
SEMI’s Strategic Materials Conference was held September 30-October 1, 2014, in Santa Clara, CA at the Biltmore hotel.
By Karey Holland, Techcet Group
The 2014 Strategic Materials Conference was very well attended. There were people from several of the leading IC makers as well as suppliers of equipment and materials to the fabs. Unfortunately, the audio and video systems were not stellar, so we had to endure some ear shattering system noise, and any light image was not visible on the screens. Otherwise, the venue was good. Throughout the conference, several themes were repeated.
Focus on the stability we hope for in post 2013 times, but concern about volatility and uncertainty of the world economics, esp. the recession-like growth numbers in Europe and Japan expected for the next few years. While forecasters (Gartner, IC Insights, VLSI Research, Linx, Techcet Group and others) anticipate IC wafer starts growing at ≥6% CAGR over the next 5 years, there is concern that any number of geo political world problems could throw us back into a global recession. Attendees had a greater concern than the presenters over the possibility of a future recession, and that the impact would be greater to IC industry now due to the entrenchment of mobile platforms.
Focus on cost of lithography as a driver for increased cost of leading edge MCUs/MPUs … with current nodes, multi-patterning requires many more expose/develop/dep/etch steps than EUV, but EUV has not yet met the requirements for manufacturing implementation. It is likely that EUV will first be used for only a few critical layers. DSA (directed self-assembly) may be used also for a few selected critical layers, but issues of defects will likely keep it from use in many layers.
Focus on the expected (and currently numerous options) for advanced devices and implications for materials. This includes advanced packaging technologies.
450mm wafers may continue to slip, if the other large IC makers (e.g. TSMC, Samsung, GlobalFoundries) don’t agree with Intel on first implementation date/node. Collaboration across the entire ecosystem was stressed for 450mm to become a reality.
Below are things I found particularly interesting in the presentations and/or at the end of day panel discussions.
The key note presentation, “Materials Innovation for the Digital 6th Sense Era,” was by Matt Nowak of Qualcomm. He discussed both the vision of the Internet of Things (IoT), the required IC devices (including analog & sensors) and implications to materials (and cost to manufacture) from these new IC devices; a perfect start to SMC 2014. Qualcomm defines the Digital 6th Sense Era is “the augmentation of human ability”, or as Sue Davis put it “intelligent data based extension of our 5 senses ==>to a 6th“. Essentially this is where the ability of the IoT/IoE data feedback can act as our 6th sense by capturing data about one & one’s environment which results in prediction/information being shared based on data collection and/or user selections regarding the environment around us (or about us, e.g., tele-health).” Because the smartphone is the “most pervasive platform ever” (US Android users average 106 Apps launched/day), it can serve as a remote connection to the IoT world … be that monitoring our health, schedules, honey-do lists, and improving our understanding and enjoyment of the world around us. For advanced logic one might expect, lithography for advanced ICs (quad patterning vs EUV) were discussed as key cost drivers. Other required/expected advanced materials include high mobility channel materials and thin barrier metals (likely Co). Beyond CMOS, new structures and materials may be required to support sensors (bio, chemical, fluidic), nano batteries, piezo, thermal, and solar harvesters.
Mark Thirsk, Linx-Consulting, reviewed IC growth and lack thereof for past years, and observed that 2014 will be “first good year in 8 years” (since 2006), and forecast 6-8% CAGR for the next few years – strongly dependent on the success of the IoT. IC market growth since 2010 correlates strongly to GDP since 2010, and thus regional GDP differences (e.g. the current European recession) are reflected in IC demand. Technology challenges & opportunities in for the next 5+ years include advanced logic (3D NAND, and new memory method after 2018), numerous AL (atomic layer) processes, 3D / advanced packaging, patterning efficiency, and complexity. The electronic materials landscape is changing: the supply chain is merging, and there are new entrants (esp. from Korea, Taiwan & China) in advanced materials such as photoresists. Interestingly, China appears to be focusing more on investing in fabless than fabs.
Duncan Meldrum, Hilltop Economics, said that the current subdued market growth (3% 2013-16) is due to more fiscal responsible people. China & Asia are growing 4 to 7.7%, US & Latin America about 2.1 to 3.1, Euro <2%, and Japan ~1.5%. The tax increase in Japan is having a very negative impact. He expects the US to see a 5% year over year improvement (very good news) with our investments finally growing in 2nd half of 2014. He anticipates healthy, but not stellar consumer spending through 2016.
Patrick Ho, Stifel Nicolas, initially discussed that for companies that follow Moore’s Law, that it is increasingly Fab capital intensity (Capex) with addition of FinFETs, new materials (e.g. High k), 3D NAND, and Multi-Patterning (from delayed EUV). One can assume this will continue to be the case as CMOS devices moves from Si channel to replacement channel filled with SiGe, Ge, or III-V and memories move to new technologies such as ReRAM, STTRAM, etc. His observation is that only Intel is pulling for 450mm, and if TSMC & Samsung don’t exert more pull, 450mm may not happen (esp. in light of the negative impact to equipment revenue per square inch of silicon). The top 4 OEMs (ASML, KLA-T, Lam, AMAT) are large enough to push back on the top 3 IC makers, and that consolidation is continuing. Patrick noted that all 4 top OEMs have dividends, and he anticipates that they will eventually get better valuations. He showed a nice list of companies he thinks are acquisition candidates (CMC, Nanometrics, Nikon, Nova, Axcelis, Rudolph, Veeco, FormFactor, and Ultratech). Other comments: Moore’s law lives, but is under stress. Innovation w/ or w/o EUV will bring industry back to Moore’s Law. Changing landscape will help economics of leading players.
Ross Kozarsky, who leads Lux Research’s advanced materials team, discussed the longer range materials he investigates such as graphene, 3D printing, and Meta-materials. Graphene film sheets are of interest for transparent conductive materials (e.g. touchscreens), possibly moving to FETs & sensors. 3D printing has been around 30 yrs; today it’s used mostly for prototyping, but manufacturing use makes sense and could really increase total growth. Multifunctional and multi-materials printers will be needed. Autonomous cars are now a big growth opportunity, opening great opportunity for chemical and material companies to innovate.
Geraud Duboix, IBM Almaden, develops porous low k materials for interconnect passivation and their integration (esp. plasma damage). In the 0.65 to 0.1um timeframe, interconnect RC delay was slowing devices even though the transistors were getting faster, and thus began the drive for lower k insulators. The ITRS has been showing the need for lower k since its inception, but it also has pushed out the date of the more aggressive low ks. Initially to achieve lower k, C and F were added to SiO2 to break-up network structure. Today, they are driving low k down by adding porosity. Once a big concern, Geraud said that ULK mechanical properties are now no longer a concern with UV treatment, the lowest k being integrated is 2.3-2.4, and new low k materials are emerging. Geraud is working on porous low k materials, to achieve lower k, and larger pores deliver lower k. He discussed the various pore-sizes in evaluation, the importance of porogens (material in the low k deposition that is later removed to create pores) and methods being used to seal the created pores (especially before conformal barrier metal deposition). Interestingly, he commented that creating and sealing the larger pores is somewhat easier, although he’s being asked to work on the smaller pores for now. During the panel discussion Mansour Moinpour (Intel) asked why Geraud was working on smaller pores that are more difficult to fill. Geraud responded that for the designers insulators with 2.0 or 1.8 k would be too big a change and they want 2.4 and 2.2 first.
Todd Younkin, from Intel’s central research (components) novel materials group, discussed that the industry will continue CMOS Scaling through 7nm. As stated by others, lithography is a challenge and using several methods to accomplish patterning, while productivity and pattern placement (alignment) are concerns. Intel is working on devices with channels of higher mobility materials that Si (III-V or MoS2) as well as beyond CMOS (e.g., GAA) devices. Todd said that early in device research development, Intel works to make sure manufacturing should be capable of meeting cost expectations. These include the cost of multi-patterning versus EUV, ultra-low k interconnect materials, etc.
Angela Franklin, of TriQuint (recently renamed Qorvo) discussed the challenges of supply management (and unlike others, she projects well when talking, so we could avoid the audio system problems … thanks Angela!). Angela educated the audience about Qorvo devices (some look more like MEMS with permanent epoxy “cavity” structures that resonate w/ the RF) which are significantly different from the leading edge logic and non-volatile most of us follow. Unlike the device manufactures that use Si, Qorvo uses smaller substrates of III-V and GaN. Many films are already on the substrates when purchased. The fab process is very solvent intensive, and only 1/3 aqueous. Unlike others, Qorvo uses significant eBeam lithography with up to 28 different resists and many negative resists, as well as metal lift-off (my first job at IBM >30 yrs ago).
Prof. Philip Wong of Stanford gave his typical dynamic and mind-stretching presentation. His discussion was focused on the single digit nodes, and the possible new channel materials for logic (III-V or 2D MoS2, MoSe2, WSe2, WTe2 or ??) and possible new devices, including carbon nanotube FET (CNFET), STTRAM, CBRAM, ReRAM (using HfOx, TaOx, TiOx). He said that memory chips will hold 32Tbits. He then smiled and said “none of this before the next 10 years”. He showed some exciting interleaved memory and logic ideas using a base of 2D or 3D FETs, topped by STTRAM, then 2D or 3D FETs, and then 3D RRAM. Because the interconnects of the bottom device are present, all processing for the others must be at low temperature (<400C).
Discussion Panel. When asked about collaboration with materials suppliers, Intel and IBM research had significantly different responses. Intel invests dollars and works with graduate students on advanced projects and hopefully a “lucky accident” brings advances. IBM research mentioned that legal issues often get in the way of collaboration with suppliers.
Notes for SMC Day 2 2014 Blog
Tim Hendry, from Intel’s supply management team started off day 2. A large concern he brought up was what he described as the widening connections between fab, material suppliers, and sub-suppliers. He then discussed the concerns and possible ways to improve connections, as well as the importance of metrology and verification of chemical quality. Unfortunately, some of the sub-suppliers are very big chemical companies that have difficulty getting excited about the low volume materials used to make ICs. He finished up by saying that Intel is focused on controlling the costs of manufacturing that require close partnerships with materials suppliers. Intel is driving for unprecedented collaboration among the materials and sub tier suppliers to achieve cost, performance and defect targets. The cost of packaging and shipping materials globally is driving investigation into new operating models to cut costs.
Dennis Hausmann of LamRC/NVLS discussed ALD/CVD in more details than others. For Each CVD/ALD step, an average of $2-$3/wafer is added to manufacturing cost, while only about $1/wafer of this is for chemistry+power+exhaust management. He reviewed at least 4 versions of ALD tools (furnaces to single wafer) and said that there is a “right ALD tool” for the right deposition job. He said that single wafer tools with proper development can meet same throughput as batch furnaces. However, if you look at the development cost, single wafer tools are much better in cost. For depositions that improve with plasma ALD, single wafer tools also make sense. An important observation by Dennis was that for ALD, sometimes it is the unknown contaminant that “makes it go”. This is something that has been observed in the past of copper plating chemistries, as well as some CMP slurries.
James ONeil, CTO Entegris had an interesting title, which should fit most suppliers “Accelerating yield in a disruptive environment”. James emphasized that suppliers need meaningful process discussions, insights & collaboration with their customers.
Adrienne Pierce of Edwards introduced SCIS collaboration to most of us. This is a supply chain collaboration working group. Some topics are tracing defects origins and BKMs for specific process (e.g. ALD).
There were then two parallel sessions; one on advanced memories and the other on 3D packaging. In the memory session, Norma Sosa of IBM talked about PCRAM (phase change memory, which Micron has been shipping for a few years now), Mark Raynor, Matheson, discussed RRAM for Non-Volatile, and Suresh Upa, SanDisk, discussed packaging implications.
After the breakout, we had presentations from four materials supplier companies. The four same very similar things. Dave Bern of Dow Chemical discussed using the “right tool” for collaboration and the importance of making sure suppliers agree to work in areas that fit their “core competencies”. Wayne Mitchel of Air Products noted that ICs are only 2% of GDP. He agreed with Dave Bern that suppliers should only agree to work (partner) with customer on areas within expertise, otherwise it takes too much time and money to execute successfully. Jean Marc Girard, Air Liquide discussed the numerous risks of supply chain, from the sub-supplier, the environment (e.g. earthquakes), and materials stability (or lack thereof). Kevin O’Shea of SAFC Hitech emphasized that taking materials from a catalog of low volume and ramping to IC manufacturing needs is not trivial, and may also not be consistent with the materials manufacturer (the sub-supplier, or company that is “primary” in the materials).
The day 2 Panel discussion had more audience participation. Some discussions I found particularly interesting are discussed below.
Tim (Intel) said the gap is getting wider between Intel, suppliers, sub-suppliers (esp. customs for IC industry). The large sub-supplier that doesn’t have an interest in moving forward – there is no motivation to increase metrology, metrics, etc. The shrinking sub-supplier base isn’t good for our industry – reduction in cost per bit comes from shrinks and reuse of capital, not only lower cost materials..
Kurt Carlson said that sub suppliers don’t think IC fabrication is the best industry – the IC industry wants more and more, yet wants to pay less and less. It’s not worth it to us (good sub-suppliers leave because it’s too costly for the small volumes).
Jean Marc said they don’t want to duplicate development costs, if they don’t need to; they would rather use universities and share on things like toxicology.
Dave said it costs millions of dollars to test materials, like EUV.
Mansour Moinpour asked about collaboration on liquid particle, GCMS, and similar – can we have joint & consistent measurements across the industry? James Entegris responded that end user need to be drivers. Jean Marc suggested that maybe SEMI standards could drive a standard of industrial analytics.
The value of roadmaps was very different to the various participants, however the idea of regulatory alignment and a roadmap related to this was generally thought to be useful.
The question of cost and logistics … there are some materials that require shipping a lot of water, which adds cost. Intel said that they are getting into more cost sensitive mobile market and they may be driven to this rather than exact materials copy in near future. Tim said the Intel CEO is “hell bent” that Intel will make money in the mobile market. “Intel will pull it off.”
By Ed Korczynski, Sr. Technical Editor, SST/SemiMD
Through-Silicon Vias (TSV) have finally reached mainstream commercial use for 3D ICs, though still for “high-end” high-performance applications. Despite allowing for extreme miniaturization, the demand for TSV has little to do with package size as evidenced by recent Samsung and TSMC product announcements for “enterprise servers” and “routers and other networking equipment.”
Used to connect opposite sides of a silicon substrate to allow for stacking of multiple Integrated Circuit (IC) chips in a single functional package, the industry has been using TSV in Micro-Electro-Mechanical Systems (MEMS) and Backside Image Sensors (BSI) manufacturing for many years now. Also, the first announcement of a commercial FPGA product using TSV in a so-called “2.5D” interposer package happened four years ago.
However, the Figure above shows that CIS and MEMS and 2.5D-FPGAs can all be categorized as “niche” applications with limited growth potentials. Specialty memory and logic (and eventually photonics) applications have long been seen as the major drivers of future TSV demand.
On September 25 of this year, TSMC announced it has collaborated with HiSilicon Technologies Co, Ltd. to create an ARM-based networking processor that integrates a 16nm-node logic chips with a 28nm-node I/O chip using silicon interposer technology. This is the same 2.5D TSMC-branded Chip-on-Wafer-on-Substrate (CoWoS) technology used in the Xilinx FPGA product. “This networking processor’s performance increases by three fold compared with its previous generation,” said HiSilicon President Teresa He. Package size reduction has nothing to do with the value of the products now demanding TSV.
Samsung announced last August that it has started mass producing the industry’s first 64GB DDR4 registered dual Inline memory modules (RDIMMs) using TSV. Targeting enterprise servers and “cloud” data centers, the new RDIMMs include 36 DDR4 packages, each of which consists of four 4-gigabit (Gb) DDR4 DRAM dice. The low-power chips are manufactured using Samsung’s 20nm-node process. The company claims that the new 64GB TSV module performs twice as fast as a 64GB module that uses wire-bonding, while consuming about half the power. Samsung has invested in TSV R&D since 2010 for 40nm-node 8GB DRAM RDIMMs and 2011 for 30nm-node 32GB DRAM RDIMMs.
The Hybrid Memory Cube (HMC) and other heterogeneous 3D-IC stacks based on TSV should be seen as long-term strategic technologies. HMC R&D led by Micron continues to serve near-term customers demanding ultra-high performance such as supercomputers and performance networking, as detailed in an SST article from last year. Micron’s Scott Graham, General Manager, Hybrid Memory Cube, commented then, “As we move forward in time, we’ll see technology evolve as costs come down for TSVs and manufacturing technology, it will enter into future space where traditional DDR type of memory has resided. Beyond DDR4, we can certainly see this technology being for mainstream memory.”
Elusive Demand for Mobile Applications
14 years ago, this editor—while working for an early innovator in TSV technology—was co-author of a “3D stacked wafer-level packaging” feature article in SST.
The lead paragraph of that article summarizes the advantages of using TSV to reduce package sizes:
As electronics applications shrink in size, integrated circuit (IC) packaged devices must be reduced both in footprint and in thickness. The main motivation for the development of smaller packages is the demand for portable communications devices, such as memory cards, smart cards, cellular telephones, and portable computing and gaming devices. End-users of such electronic devices are interested in greater functionality per unit volume, not relatively simplistic metrics, such as transistors per chip or circuit speed.
While still true, established and inherently lower-cost packaging technologies have been extended to allow for stacking of thinned silicon chips: wire-bonding can connect dozens of layers to a substrate, flip-chip with wire-bonding and substrate-vias can connect 4 layers easily, and both fan-in and fan-out packages can provide ample electrical Input/Output (I/O) connections. At SEMICON West this year in the annual Yield Forum breakfast sponsored by Entegris, Qualcomm vice president Dr. Geoffry Yu reminded attendees that, “TSV eventually will come, but the million dollar question is when. The market forces will dictate the answer.” What has become clear in the last year is that market demand for improved product performance will set the pace.
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The increasing demand for wireless data bandwidth and the emergence of LTE and LTE Advanced standards pushes radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance.
Everybody’s talking about it, but just what is DFM? According to various EDA company websites, design for manufacturing can be: generation of yield optimized cells; layout compaction; wafer mapping optimization; planarity fill; or, statistical timing among other definitions. Obviously, there is very little consensus. For me, DFM is what makes my job hard: Characterizing it, and developing tools for it, is the most important item on my agenda.
In nanometer designs, the number of single vias, and the number of via transitions with minimal overlap, can contribute significantly to yield loss. Yet doubling every via leads to other yield-related problems and has a huge impact on design size. While there is still concern over of how many vias can be fixed without rerouting and without creating DRC violations, the Calibre via doubling tool can identify via transitions and recommend areas for second via insertion without increasing area.
Certain measurement methodologies can be inaccurate even if they’re precise, and there are known errors associated with certain system parameters.
The etch loading effect is the dominant factor that impacts final CD control at advanced nodes with shrinking critical dimension.
A look at ways to simplify the optical and resist model calibration and to speed up the entire process.
Fabricating interconnects is one of the most process-intensive and cost-sensitive parts of manufacturing.
Testing interposer-based versions of stacked die and future versions using through-silicon vias.