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Posts Tagged ‘7nm’

Solid State Watch: July 3-9, 2015

Friday, July 10th, 2015
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New Applied PVD system targets TiN hardmasks for 10nm, 7nm chips

Tuesday, May 19th, 2015

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By Jeff Dorsch, Contributing Editor

Applied Materials today introduces the Applied Endura Cirrus HTX PVD, a physical vapor deposition system for creating titanium nitride hardmask films that could be used in fabricating 10-nanometer and 7nm chips.

“Titanium nitride is the metal hardmask of choice,” harder than copper and nearly as hard as diamond, says Sree Kesapragada, Applied’s global product manager for Metal Deposition Products.

“Patterning plays key role in defining the interconnect,” Kesapragada says. “Perfect via alignment is critical for device yield. Hardmask ensures the perfect via alignment critical for yield.”

The hardmasks created with the Endura Cirrus HTX TiN system strike the required balance between neutral stress and film density hardness, he asserts. The TiN hardmask, meant to resist the erosion of etching, helps ensure that via etches land where they are supposed to, and not too close to neighboring vias, which can creates shorts.

Metal hardmask layer manages alignment errors.

Applied has worked with customers at multiple sites in developing the new PVD system over the past two to three years, according to Kesapragada. He emphasizes that the Cirrus HTX TiN system offers “precision control over TiN crystal growth,” as the process chamber is “designed for tensile high-density TiN films.” The new PVD system enables high density, tensile films thanks to a high level of ionization during deposition made possible by a high frequency source.

High film desnity is needed to prevent erosion, and a neutral-to-tensile stress is needed for pattern fidelity. CVD/ALD films have tensile stress, but are low density. Traditionally deposited TiN films have good density, but compressive stress.

The formation of “islands” of TiN crystals is almost like chemical vapor deposition, “layer by layer,” Kesapragada says, “in a PVD chamber.”

In the process chamber, the first of its kind, titanium atoms are reactively sputtered in a nitrogen-based plasma, allowing for tunable composition, according to Applied. This chamber can be used for high-volume manufacturing of semiconductors with 7nm features, covering two process-node generations, Kesapragada says.

There is also “very established integration” with chemical mechanical planarization equipment, he adds.

Applied is the market leader in TiN PVD systems, with more than 200 systems shipped, according to Kesapragada. Those PVD systems have more than 700 process chambers, he adds.

The Endura Cirrus HTX TiN PVD system is being formally introduced this week at the IEEE’s 2015 International Interconnect Technology Conference in Grenoble, France.

Complexity is the Theme at Lithography Conference

Monday, February 23rd, 2015

By Jeff Dorsch, contributing editor

Nikon and KLA-Tencor put on separate conferences in San Jose, Calif., on Sunday, February 22, tackling issues in advanced optical lithography. The overarching theme in both sessions was the increased complexity of lithography as it approaches the 10-nanometer and 7nm process nodes.

“Complexity is much higher,” said Kevin Lucas of Synopsys at the Nikon event, LithoVision 2015. He noted that at the 28nm process node, lithographers could resort to five different options. For 14nm or 16nm, that expanded to eight options. There are 21 options available at 10nm, Lucas said, and at 7nm that explodes to more than 71 options.

“The increase in complexity is pretty dramatic,” he observed.

Electronic design automation vendors have “to provide more accurate modeling,” Lucas said. “We will have to go to better methods of [optical proximity correction].”

Ralph Dammel of EMD Performance Materials reviewed the situation in semiconductor materials as IC gate lengths continue to shrink. “We’re going to move from adding new elements to different forms of elements,” he said, such as graphene, silicine, black phosphorus, and molybdenum disulfide.

At the Lithography Users Forum, the event put on by KLA-Tencor, Mark Phillips of Intel said, “Scaling can continue, but it needs improved metrology.” He added, “We need side-by-side accuracy metrics.”

Phillips reported on Intel’s work with ASML Holding on developing pellicles for the reticles of ASML’s extreme-ultraviolet lithography systems. The companies have together come up with a prototype pellicle, which needs more development as a commercial product, he said.

5nm Node Needs EUV for Economics

Thursday, January 29th, 2015

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By Ed Korczynski, Sr. Technical Editor

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At IEDM 2014 last month in San Francisco, Applied Materials sponsored an evening panel discussion on the theme of “How do we continue past 7nm?” Given that leading fabs are now ramping 14nm node processes, and exploring manufacturing options for the 10nm node, “past 7nm” means 5nm node processing. There are many device options possible, but cost-effective manufacturing at this scale will require Extreme Ultra-Violet (EUV) lithography to avoid the costs of quadruple-patterning.

Fig. 1: Panelists discuss future IC manufacturing and design possibilities in San Francisco on December 16, 2014. (Source: Pete Singer)

Figure 1 shows the panel being moderated by Professor Mark Rodwell of the University of California Santa Barbara, composed of the following industry experts:

  • Karim Arabi, Ph.D. – vice president, engineering, Qualcomm,
  • Michael Guillorn, Ph.D. – research staff member, IBM,
  • Witek Maszara, Ph.D. – distinguished member of technical staff, GLOBALFOUNDRIES,
  • Aaron Thean, Ph.D. – vice president, logic process technologies, imec, and
  • Satheesh Kuppurao, Ph.D. – vice president, front end products group, Applied Materials.

Arabi said that from the design perspective the overarching concern is to keep “innovating at the edge” of instantaneous and mobile processing. At the transistor level, the 10nm node process will be similar to that at the 14nm node, though perhaps with alternate channels. The 7nm node will be an inflection point with more innovation needed such as gate-all-around (GAA) nanowires in a horizontal array. By the 5nm node there’s no way to avoid tunnel FETs and III-V channels and possibly vertical nanowires, though self-heating issues could become very challenging. There’s no shortage of good ideas in the front end and lots of optimism that we’ll be able to make the transistors somehow, but the situation in the backend of on-chip metal interconnect is looking like it could become a bottleneck.

Guillorn extolled the virtues of embedded-memory to accelerate logic functions, as a great example of co-optimization at the chip level providing a real boost in performance at the system level. The infection at 7nm and beyond could lead to GAA Carbon Nano-Tube (CNT) as the minimum functional device. It’s limited to think about future devices only in terms of dimensional shrinks, since much of the performance improvement will come from new materials and new device and technology integration. In addition to concerns with interconnects, maintaining acceptable resistance in transistor contacts will be very difficult with reduced contact areas.

Maszara provided target numbers for a 5nm node technology to provide a 50% area shrink over 7nm:  gate pitch of 30nm, and interconnect level Metal 1 (M1) pitch of 20nm. To reach those targets, GLOBALFOUNDRIES’ cost models show that EUV with ~0.5 N.A. would be needed. Even if much of the lithography could use some manner of Directed Self-Assembly (DSA), EUV would still be needed for cut-masks and contacts. In terms of device performance, either finFET or nanowires could provide desired off current but the challenge then becomes how to get the on current for intended mobile applications? Alternative channels with high mobility materials could work but it remains to be seen how they will be integrated. A rough calculation of cost is the number of mask layers, and for 5nm node processing the cost/transistor could still go down if the industry has ideal EUV. Otherwise, the only affordable way to go may be stay at 7nm node specs but do transistor stacking.

Thein detailed why electrostatic scaling is a key factor. Parasitics will be extraordinary for any 5nm node devices due to the intrinsically higher number of surfaces and junctions within the same volume. Just the parasitic capacitances at 7nm are modeled as being 75% of the total capacitance of the chip. The device trend from planar to finFET to nanowires means proportionally increasing relative surface areas, which results in inherently greater sensitivity to surface-defects and interface-traps. Scaling to smaller structures may not help you if you loose most of the current and voltage in non-useful traps and defects, and that has already been seen in comparisons of III-V finFETs and nanowires. Also, 2D scaling of CMOS gates is not sustainable, and so one motivation for considering vertical transistors for logic at 5nm would be to allow for 20nm gates at 30nm pitch.

Kappurao reminded attendees that while there is still uncertainty regarding the device structures beyond 7nm, there is certainty in 4 trends for equipment processes the industry will need:

  1. everything is an interface requiring precision materials engineering,
  2. film depositions are either atomic-layer or selective films or even lattice-matched,
  3. pattern definition using dry selective-removal and directed self-assembly, and
  4. architecture in 3D means high aspect-ratio processing and non-equilibrium processing.

An example of non-equilibrium processing is single-wafer rapid-thermal-annealers (RTA) that today run for nanoseconds—providing the same or even better performance than equilibrium. Figure 2 shows that a cobalt-liner for copper lines along with a selective-cobalt cap provides a 10x improvement in electromigration compared to the previous process-of-record, which is an example of precision materials engineering solving scaling performance issues.

Fig. 2: ElectroMigration (EM) lifetimes for on-chip interconnects made with either conventional Cu or Cu lined and capped with Co, showing 10 times improvement with the latter. (Source: Applied Materials)

“We have to figure out how to control these materials,” reminded Kappurao. “At 5nm we’re talking about atomic precision, and we have to invent technologies that can control these things reliably in a manufacturable manner.” Whether it’s channel or contact or gate or interconnect, all the materials are going to change as we keep adding more functionality at smaller device sizes.

There is tremendous momentum in the industry behind density scaling, but when economic limits of 2D scaling are reached then designers will have to start working on 3D monolithic. It is likely that the industry will need even more integration of design and manufacturing, because it will be very challenging to keep the cost-per-function decreasing. After CMOS there are still many options for new devices to arrive in the form of spintronics or tunnel-FETs or quantum-dots.

However, Arabi reminded attendees as to why the industry has stayed with CMOS digital synchronous technology leading to design tools and a manufacturing roadmap in an ecosystem. “The industry hit a jackpot with CMOS digital. Let’s face it, we have not even been able to do asynchronous logic…even though people tried it for many years. My prediction is we’ll go as far as we can until we hit atomic limits.”

SPIE Photomask Technology Wrap-up

Tuesday, September 23rd, 2014

Extreme-ultraviolet lithography was a leading topic at the SPIE Photomask Technology conference and exhibition, held September 16-17-18 in Monterey, Calif., yet it wasn’t the only topic discussed and examined. Mask patterning, materials and process, metrology, and simulation, optical proximity correction (OPC), and mask data preparation were extensively covered in conference sessions and poster presentations.

Even with the wide variety of topics on offer at the Monterey Conference Center, many discussions circled back to EUV lithography. After years of its being hailed as the “magic bullet” in semiconductor manufacturing, industry executives and engineers are concerned that the technology will have a limited window of usefulness. Its continued delays have led some to write it off for the 10-nanometer and 7-nanometer process nodes.

EUV photomasks were the subject of three conference sessions and the focus of seven posters. There were four posters devoted to photomask inspection, an area of increasing concern as detecting and locating defects in a mask gets more difficult with existing technology.

The conference opened Tuesday, Sept. 16, with the keynote presentation by Martin van den Brink, the president and chief technology officer of ASML Holding. His talk, titled “Many Ways to Shrink: The Right Moves to 10 Nanometer and Beyond,” was clearly meant to provide some reassurance to the attendees that progress is being made with EUV.

He reported his company’s “30 percent improvement in overlay and focus” with its EUV systems in development. ASML has shipped six EUV systems to companies participating in the technology’s development (presumably including Intel, Samsung Electronics, and Taiwan Semiconductor Manufacturing, which have made equity investments in ASML), and it has five more being integrated at present, van den Brink said.

The light source being developed by ASML’s Cymer subsidiary has achieved an output of 77 watts, he said, and the company expects to raise that to 81 watts by the end of 2014. The key figure, however, remains 100 watts, which would enable the volume production of 1,000 wafers per day. No timeline on that goal was offered.

The ASML executive predicted that chips with 10nm features would mostly be fabricated with immersion lithography systems, with EUV handling the most critical layers. For 7nm chips, immersion lithography systems will need 34 steps to complete the patterning of the chip design, van den Brink said. At that process node, EUV will need only nine lithography steps to get the job done, he added.

Among other advances, EUV will require actinic mask inspection tools, according to van den Brink. Other speakers at the conference stressed this future requirement, while emphasizing that it is several years away in implementation.

Mask making is moving from detecting microscopic defects to an era of mesoscopic defects, according to Yalin Xiong of KLA-Tencor. Speaking during the “Mask Complexity: How to Solve the Issues?” panel discussion on Thursday, Sept. 18, Xiong said actinic mask inspection will be “available only later, and it’s going to be costly.” He predicted actinic tools will emerge by 2017 or 2018. “We think the right solution is the actinic solution,” Xiong concluded.

Peter Buck of Mentor Graphics, another panelist at the Sept. 18 session, said it was necessary to embrace mask complexity in the years to come. “Directed self-assembly has the same constraints as EUV and DUV (deep-ultraviolet),” he observed.

People in the semiconductor industry place high values on “good,” “fast,” and “cheap,” Buck noted. With the advent of EUV lithography and its accompanying challenges, one of those attributes will have to give way, he said, indicating cheapness was the likely victim.

Mask proximity correction (MPC) and Manhattanization will take on increasing importance, Buck predicted. “MPC methods can satisfy these complexities,” he said.

For all the concern about EUV and the ongoing work with that technology, the panelists looked ahead to the time when electron-beam lithography systems with multiple beams will become the litho workhorses of the future.

Mask-writing times were an issue touched upon by several panelists. Shusuke Yoshitake of NuFlare Technology reported hearing about a photomask design that took 60 hours to write. An extreme example, to be sure, but next-generation multi-beam mask writers will help on that front, he said.

Daniel Chalom of IMS Nanofabrication said that with 20nm chips, the current challenge is reduce mask-writing times to less than 15 hours.

In short, presenters at the SPIE conference were optimistic and positive about facing the many challenges in photomask design, manufacturing, inspection, metrology, and use. They are confident that the technical hurdles can be overcome in time, as they have in the past.