The Week In Review: May 20
Intel tries again; IC forecasts; Applied’s results; EUV/450mm challenges; building fab roads; switching to SOI
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Deep Insights for Chip Builders
Intel tries again; IC forecasts; Applied’s results; EUV/450mm challenges; building fab roads; switching to SOI
3D magnetic vortices; paper chips; flexible phones.
EUV source vendor gives up; Atom vs. ARM; Obama visits Applied; R&D crunch; Cadence buys IP firm; Mentor’s cost assessment tool.
Directed self-assembly and multi-beam take on new importance as the future of EUV lithography remains in limbo.
Is the long downturn finally at an end for used equipment vendors? And what does that mean for everyone else?
Planar approaches will have trouble scaling after 10nm due to floating gate issues; some companies may shift even sooner.
Progress has been made, but there’s still a lot of work to do over the next five years if the industry expects to meet its 2018 rollout schedule; economic benefits still being discussed.
Test is a big hurdle for stacking die. Technologies such as BiST are evolving to take up the slack.
Apple spearheads push to replace GaAS for RF front end, but how many foundries will the market support?
Last of three parts: Hybrid metrology; debate over directed self-assembly; new inspection tools; shrinking R&D dollars.
Move to multi-mode, multi-band power amps makes material change more attractive, raises significant threat for GaAs suppliers.
Double patterning is a necessity at 20nm, but it brings a number of new errors for the design team to deal with.
While different parts of the semiconductor industry have embraced 3D transistors and die, there are still huge gaps on the tools side.
First of three parts: What’s missing, what’s running out of steam, and best guesses for how to tackle issues at future process nodes.
Second of three parts: Litho challenges; thinner resists; overlay and process effects; finFETs; stacked die.
Last of three parts: Hybrid metrology; debate over directed self-assembly; new inspection tools; shrinking R&D dollars.
Second of three parts: the future of e-beam and maskless; nanoimprint; DFM’s role in double patterning; a growing emphasis on collaboration.
First of three parts: The future and current state of EUV, ArF, nanoimprint, DSA, and direct e-beam; how much will the next node cost; where will the development money come from.
Last of three parts: EUV’s road map, venture capital, silicon photonics, directed self-assembly, and multipatterning.
First of three parts: Process control, variability, lithography, materials, stacked die, Moore’s Law and 450mm wafers.
Second of three parts: FinFET yields at different process nodes; controlling variance; differences between finFETs at 14nm and 10nm; SOI vs. bulk CMOS.
Last of three parts: 450nm wafers; the effect of industry consolidation; TSVs; finFETs; stacked die; fully depleted SOI.
First of three parts: What’s done and what’s missing from the supply chain; how good are the tools; 2.5D vs. 3D; test issues; the role of standards and where they do and don’t exist; what will drive demand and when.
What’s changing at the leading edge of Moore’s Law and why those changes are so important.
Progress and future problems with advanced processes—and where the solutions will come from.
Double patterning, finFETs, design rules at advanced nodes are driving design for manufacturing into the stratosphere.
It’s been talked about for years. Why is this issue suddenly so pressing?
One-on-one with GlobalFoundries EVP Mike Noonen.
It’s the end of the line for planar transistors. Now what?
The impact of multi patterning, new design rules and silicon photonics on semiconductor manufacturing in the future.
Semiconductor Manufacturing & Design talks with Luigi Capodieci, fellow at GlobalFoundries, about EUV, the challenges at 20nm and beyond, and the future of the foundry model.
A candid conversation with Randhir Thakur, general manager of Applied Materials’ Silicon Systems Group, about what’s changing in the foundries and the equipment needed to create ICs.
The advent of an extra dimension in design could require some significant changes in materials and manufacturing.