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Top Stories Archive

Air-Gaps for FinFETs Shown at IEDM

Researchers from IBM and Globalfoundries will report on the first use of “air-gaps” as part of the dielectric insulation around active gates of “10nm-node” finFETs at the upcoming International Electron Devices Meeting (IEDM) of the IEEE.

Multibeam Patents Direct Deposition & Direct Etch

E-beams directed by design to form and repair device structures.

Has SOI’s Turn Come Around Again?

Analysts see another chance for Silicon-on-Insulator technology, as proponents claim technical and cost advantages for fully-depleted SOI.

D2S Releases 4th-Gen IC Computational Design Platform

14 installations of GPU-accelerated platforms aid mask-makers worldwide

Elusive Analog Fault Simulation Finally Grasped

The test time per logic gate in ICs has greatly decreased in the last 20 years, thanks to scan-based design-for-test (DFT), automatic test pattern generation (ATPG) tools, and scan compression.

Linde Launches Asian R&D Center in Taiwan

Strategic investment serves IC, FPD, LED, and PV fabs

What is Your China Strategy?

Equipment vendors have a lot on their plates now, with memory customers pushing 3D NAND, foundries advancing to the 7 nm node, and 200mm fabs clamoring to come up with hard-to-find tools.

3D-NAND Deposition and Etch Integration

Lam talks about process control and default roadmaps.

Silicon as Disruptive Platform for IoT Applications

Q&A with Marie Semeria, CEO of CEA-Leti

Fab Facilities Data and Defectivity

In-the-know attendees at SEMICON West at a Thursday morning working breakfast heard from executives representing the world’s leading memory fabs discuss manufacturing challenges at the 4th annual Entegris Yield Forum.