FinFETs On SOI
What’s changing at the leading edge of Moore’s Law and why those changes are so important.
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Deep Insights for Chip Builders
What’s changing at the leading edge of Moore’s Law and why those changes are so important.
Last of three parts: Hybrid metrology; debate over directed self-assembly; new inspection tools; shrinking R&D dollars.
Second of three parts: Litho challenges; thinner resists; overlay and process effects; finFETs; stacked die.
First of three parts: What’s missing, what’s running out of steam, and best guesses for how to tackle issues at future process nodes.
Progress and future problems with advanced processes—and where the solutions will come from.
Double patterning, finFETs, design rules at advanced nodes are driving design for manufacturing into the stratosphere.
Last of three parts: More on modeling; Moore’s Law; imbalances; the challenges and impact of stacked die, and when they’re likely to show up.
It’s been talked about for years. Why is this issue suddenly so pressing?
Last of three parts: EUV’s road map, venture capital, silicon photonics, directed self-assembly, and multipatterning.
Second of three parts: the future of e-beam and maskless; nanoimprint; DFM’s role in double patterning; a growing emphasis on collaboration.