IFTLE 307 Micross Acquires RTI Int Fab & Personnel ; Teledyne Heterogeneous Integration with Ziptronix DBI; Semicon Taiwan part 1: Market Trends
By Dr. Phil Garrou, Contributing Editor
Micross Components Acquires RTI Int. Fab and Packaging Group
Micross Components of Orlando, FLA announced the acquisition of RTI International’s Microsystem Integration and Packaging group and fab in Research Triangle Park, NC. Some of you may recall this RTI site as The Microelectronics Center of NC (MCNC) in the late 19080s through early 2000’s.
Micross is a provider of bare die and wafers, custom packaging and assembly, component modification services, electrical and environmental testing to manufacturers and users of semiconductor devices. The 35 year old company serves the Defense, Space, Medical, Industrial, and Fabless Semiconductor markets.
This acquisition brings the RTI wafer bumping, 2.5D/3D packaging and interconnects technologies to the hi-reliability electronics platform of Micross. Micross plan is to expand its capabilities to serve customers in the defense and medical electronics sectors with these newly acquired advanced packaging technologies.
The Micross “Advanced Interconnect Technology” ( AIT )” team will be led by VP Dr. John Lannon , Director of Operations Rex Anderson and Director of Engineering Alan Huffman.
The financial details of the acquisition were not revealed.
Teledyne Details Heterogeneous Integration using Ziptronix DBI
In IFTLE 303, we indicated that Sony was using the Ziptronix DBI process in their image sensors for the Samsung Galaxy S7 [link]
We have recently discovered that Teledyne, under the DARPA DAHI program, has demonstrated 3D integration of high- performance compound semiconductor devices and Si CMOS using similar technology. Teledyne’s Miguel Urteaga indicates that “… Adding the complexity and integration density of CMOS to Teledyne’s ultra-high speed Indium Phosphide bipolar transistor process enables new classes of mm-wave and sub-mm-wave electronics for future DoD and commercial applications” A cross-section is shown below.
Over the next few weeks we will review some of the highlights of the recent Semicon Taiwan Conference. This week we will look at the “market trends” forum moderated by Elizabeth Sun of TSMC.
Handel Jones – Int Business Strategies
IBS projects the Semiconductor market to decline in 2016. He market broken out by product type is shown below:
IBS projects that 3D NAND flash will overtake 2D NAND Flash in 2018. 64 layers should be in volume production in 2017. Samsung appears 12-18 mo ahead of its competition.
Wafer fab activity in China shows a strong emphasis on memory as shown below. However Chinese DRAM vendors are not expected to have a large impact on supply before 2020.
Dan Tracy – SEMI Equipment & Materials Outlook
Of the 21 fabs beginning construction, 11 will be in China.
200mm capacity is expanding with 8% growth expected between 2015 and 2019.
The wafer materials forecast is shown below:
The packaging materials forecast is shown below. “Other” includes solder balls and WLP dielectrics.
A key factor here is that laminate based substrates will begin to feel the pressure of FOWLP packaging as they take market share.
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