New Benchmark Established for EUV
I received this news from Dan Corliss of IBM today and it is reproduced below. Dan is the EUV Development Program Manager for IBM. As the previous goal for ASML scanner for 2014 was 500 wafers a day, this is definitely big news. Dan called it a “watershed moment” in his LinkedIn post. Of course, we need to see this type of performance to happen longer term like weekly basis, and it needs to be repeated by several leading edge chip makers but this is a sign of good things to come. Congratulations to Dan and his team, ASML and Cymer for significant achievement. We needed this and it looks like this EUVL is finally getting ready for production!
IBM’s NXE3300B scanner, at the EUV Center of Excellence in Albany, recently completed a “40W” EUV light source upgrade. The upgrade resulted in better than projected performance with 44W of EUV light being measured at intermediate focus and confirmed in resist at the wafer level. In the first 24 hours of operation after the upgrade 637 wafer exposures were completed in normal production lot mode with:
- 20 mJ dose
- 83 image fields/wafer (full wafer coverage, including partial die)
- conventional illumination
This is a watershed moment for EUV as it establishes the benchmark capability of the EUV source and scanner to support semiconductor technology node development.