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Posts Tagged ‘STMicroelectronics’

Blog review February 3, 2014

Monday, February 3rd, 2014

Ira Feldman provides an interesting perspective on last month’s SEMI Industry Strategy Symposium. He notes that numerous speakers including Jon Casey (IBM) and Mike Mayberry (Intel) stated that scaling will continue below the 10 nm process node perhaps to 5 or 7 nm. However, the question raised by both the speakers and the audience was at what cost will this scaling be achieved.

“Long live the FinFET,” says Zhihong Liu, Executive Chairman, ProPlus Design Solutions, Inc. In this blog post, he describes how designers will have to seek out new tools and methodologies to overcome FinFET design challenges. One example is the adoption of giga-scale parallel SPICE simulators to harness circuit simulation challenges in FinFET designs. Traditional SPICE simulators don’t have the capacity and lack sufficient performance to support FinFET designs, while FastSPICE simulators likely will not meet accuracy requirements, he writes.

Adele Hars of Advanced Substrate News reports that STMicroelectronics will soon be announcing a “major foundry player” that will be both a dual FD-SOI manufacturing source for ST, plus an open source for the industry. This important piece of news came out of the company’s Q4 and FY13 presentation in Paris on January 28th.

Phil Garrou finishes up his review of the IMAPS 2013 meeting, with an analysis of Xilinx/SPIL results from their 2.5D 28nm FPGA program, a review of the Copper TSV work presented by Nanyang/IME, Canon’s FPA-5510iV and FPA-5510iZ TSA steppers designed to support high density processes and the implementation of 2.5 & 3D technology, and a report on the embedded technology being developed by AT&S.

Solid State Watch: Nov. 8-14, 2013

Friday, November 15th, 2013
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The Week In Review: Nov. 7, 2013

Friday, November 8th, 2013

Peregrine Semiconductor Corp. and GLOBALFOUNDRIES are sampling the first RF Switches built on Peregrine’s new UltraCMOS 10 RF SOI technologies. This partnership unites Peregrine’s 25 years of RF SOI experience with a tier-one foundry. In a joint development effort, GLOBALFOUNDRIES and Peregrine created a unique fabrication flow for the versatile, new, 130 nm UltraCMOS 10 technology platform. This new technology delivers a more than 50-percent performance improvement over comparable solutions. UltraCMOS 10 technology gives smartphone manufacturers unparalleled flexibility and value without compromising quality for devices ranging from 3G through LTE networks.

Peregrine Semiconductor this week celebrated two significant milestones – its 25th anniversary of pioneering RF SOI solutions and the shipment of the two-billionth chip. Peregrine reaches the two-billionth-chip milestone in an order to Murata Manufacturing Company, the supplier of RF front-end modules for the global mobile wireless marketplace.

Rubicon Technology announced the launch of the first commercial line of large diameter patterned sapphire substrates (PSS) in four-inch through eight-inch diameters.  This new product line provides LED chip manufacturers with a ready-made source of large diameter PSS to serve the needs of the rapidly growing LED general lighting industry.

Semiconductor Research Corporation and Northeastern University researchers announced advancements in radio-frequency (RF) circuit technology that promise to improve and widen the applications of mobile devices.

Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers, through a unique silicon fin replacement process. The achievement illustrates progress toward 300mm and future 450mm high-volume wafer manufacturing of advanced heterogeneous CMOS devices, monolithically integrating high-density compound semiconductors on silicon.

STMicroelectronics announced this week its close collaboration with Memoir Systems has made the revolutionary Algorithmic Memory Technology available for embedded memories in application-specific integrated circuits (ASICs) and Systems on Chips (SoCs) manufactured in ST’s fully-depleted silicon-on-insulator (FD-SOI) process technology.

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