Synthetic diamond process enables quantum computing
There is a growing interest in the area of quantum computing. A quantum computer works by storing the 0s and 1s of information in quantum superposition states. They could one day solve problems that are impossible for even the fastest conventional supercomputers.
In one of the latest efforts, Element Six, Harvard University, the California Institute of Technology and Max-Planck-Institut für Quantenoptik, have devised a single-crystal synthetic diamond to enable the development of a quantum-bit memory. Using Element Six’s synthetic diamond technology and its chemical vapor deposition (CVD) process, the researchers also demonstrated a quantum bit memory that exceeds one second at room temperature.
This is said to be the first time that such long memory times have been reported for a material at room temperature, giving synthetic diamonds an advantage over rival materials and technologies, such as cryogenic cooling.
Mikhail Lukin of Harvard’s Department of Physics, said: “These findings might one day lead to novel quantum communication and computation technologies, but in the nearer term may enable a range of novel and disruptive quantum sensor technologies, such as those being targeted to image magnetic fields on the nano-scale for use in imaging chemical and biological processes.”
Element Six’s synthetic diamonds are ideal for applications that require extreme hardness and thermal conductivity. Applications include semiconductors, lasers, quantum computing, and magnetometry and bio-medical sensors.
ReRAMs take another step towards commercialization
R&D organization IMEC recently presented improvements in performance and reliability of resistive RAM (ReRAM) cells by process improvements and stack engineering. RRAM is a promising next-generation memory technology that could replace NAND flash.
IMEC demonstrated asymmetric bipolar RRAM cells with high-performance and ultra-low operation current at <500nA. A hafnium scavenging layer was proven to be key in the stack asymmetry of defect distribution and in the forming process. The state resistances were controlled by introducing aluminium oxide as insert layer, hafnium oxide was kept as a buffer material for further improving the filament resistance control, and stack thinning allowed a lower forming current.
These results were obtained in cooperation with IMEC’s key partners in its core CMOS programs, including Globalfoundries, Intel, Micron, Panasonic, Samsung, TSMC, Elpida, SK Hynix, Fujitsu, Toshiba/SanDisk, and Sony.