Posts Tagged ‘high-k metal gate’

Designing into A Foundry Low-Power High-k Metal Gate 28nm CMOS Solution

Tuesday, July 31st, 2012

28nm Super Low Power is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. The 28nm process technology is slated to become the foundation for a new generation of portable electronics that are capable of handling streaming video, data, voice, social networking and mobile commerce applications.

To view this white paper, click here.

The Challenges Of 28nm HKMG

Tuesday, June 26th, 2012

28nm Super Low Power (28nm-SLP) is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. This technology has four Vt’s (high, regular, low and super low) for design flexibility with multi-channel length capability and offers the ultimate in small die size and low cost. Multiple SRAM bit cells for high density and high-performance are available. With the simpler process integration of a “Gate-First” HKMG scheme, 28nm-SLPalso offers the use of an eFuse, which is known to be more competitive and superior than a BEOL copper fuse solution.

To read more, click here.