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Posts Tagged ‘doping’

Solid State Watch: May 20-26, 2016

Tuesday, May 31st, 2016
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Solid Doping for Bulk FinFETs

Monday, January 5th, 2015


By Ed Korczynski, Sr. Technical Editor

In another example of the old one-liner that “all that is old is new again,” the old technique of solid-source doping is being used by Intel for a critical process step in so-called “14nm node” finFET manufacturing. In the 7th presentation in the 3rd session of this year’s IEDM, a late news paper written by 52 co-authors from Intel titled “A 14nm Logic Technology Featuring 2nd-Generation FinFET Transistors, Air-Gapped Interconnects, Self-Aligned Double Patterning and a 0.0588m2 SRAM Cell Size” disclosed that solid source doping was used under the fins.

As reported by Dick James of Chipworks in his blog coverage of IEDM this year, the fins have a more vertical profile compared to the prior “22nm node” and are merely 8nm wide (Fig. 1). Since Intel is still using bulk silicon wafers instead of silicon-on-insulator (SOI), to prevent leakage through the substrate these 8nm fins required a new process to make punch-through stopper junctions, and the new sub-fin doping technique uses solid glass sources. Idsat is claimed to improve by 15% for NMOS and 41% for PMOS over the prior node, and Idlin by 30% for NMOS and 38% for PMOS.

FIGURE: Intel Corp’s “14nm node” finFETs show (in the left SEM) 8nm wide and 42nm high fins in cross-section, below which are located the punch-through stopper junctions. (Source: IEDM 2014, Late News 3.7)

Solid glass sources of boron (B) and phosphorous (P) dopants have been used for decades in the industry. In a typical application, a lithographically defined silicon-nitride hard-mask protects areas from a blanket deposition in a tube furnace of an amorphous layer containing the desired dopant. Additional annealing before stripping off the dopant layer allows for an additional degree of freedom in activating dopants and forming junctions.

In recent years, On Semiconductor published how solid-source doping on the sidewalls of Vertical DMOS transistors enable a highly phosphorous doped path for the drain current to be brought back to the silicon surface. The company shows that phosphorous-oxy-chloride (POCl) and phospho-silicate glass (PSG) sources can both be used to form heavily doped junctions 1-2 microns deep.

The challenge for solid-source doping of 8nm wide silicon fins is how to scale processes that were developed for 1-2 microns to be able to form repeatable junctions 1-2 nm in scale. Self-aligned lithographic techniques could be used to mask the tops of fins, and various glass sources could be used. It is likely that ultra-fast annealing is needed to form stable ultra-shallow junctions.

Intel is notoriously protective of process Intellectual Property (IP) and so has almost certainly ensured that any equipment and materials suppliers who work on the solid-source doping process sign Non-Disclosure Agreements (NDA) with amendments that forbid acknowledging signing the NDA itself, so it is pointless to directly ask for any further details at this point. However, slides from John Borland’s recent presentation at the NCCAVS Junction Technology Users Group meeting provide a great overview of the publicly available information on finFET junction formation, and include the following:

…higher dopant activation can be realized at low temperatures if the junction is amorphous and recrystalized by using SPE (solid phase epitaxy) recrystalization of the junction as also shown in the data by Intel.

Also seen at IEDM this year in the 7th presentation of the Advanced Process Modules section, Taiwanese researchers—National Nano Device Laboratories, National Chiao Tung University, and National Cheng Kung University—joined with Californian consultants—Current Scientific, Evans Analytical Group—to show “A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing.” They claim an ideal subthreshold swing (~60 mV/dec) at a high doping level. Poly-Si n & p JLFinFETs (W/L=10/20 nm) with SDP experimentally exhibit superior gate control (Ion/Ioff >10E6) and improved device variation.


Germanium Junctions for CMOS

Tuesday, November 25th, 2014


By Ed Korczynski, Sr. Technical Editor, Solid State Technology and SemiMD

It is nearly certain that alternate channel materials with higher mobilities will be needed to replace silicon (Si) in future CMOS ICs. The best PMOS channels are made with germanium (Ge), while there are many possible elements and compounds in R&D competition to form the NMOS channel, in part because of difficulties in forming stable n-junctions in Ge. If the industry can do NMOS with Ge then the integration with Ge PMOS would be much simpler than having to try to integrate a compound semiconductor such as gallium-arsenide or indium-phosphide.

In considering Ge channels in future devices, we must anticipate that they will be part of finFET structures. Both bulk-silicon and silicon-on-insulator (SOI) wafers will be used to build 3D finFET device structures for future CMOS ICs. Ultra-Shallow Junctions (USJ) will be needed to make contacts to channels that are nanoscale.

John Borland is a renowned expert in junction-formation technology, and now a principle with Advanced Integrated Photonics. In a Junction Formation side-conference at SEMICON West 2014, Borland presented a summary of data that had first been shown by co-author Paul Konkola at the 2014 International Conference on Ion Implant Technology. Their work on “Implant Dopant Activation Comparison Between Silicon and Germanium” provides valuable insights into the intrinsic differences between the two semiconducting materials.

P-type implants into Ge showed an interesting self-activation (seen as a decrease in of p-type dopant after implant, especially for monomer B as the dose increases.  Using 4-Point-Probe (4PP) to measure sheet-resistance (Rs), the 5E14/cm2 B-implant Rs was 190Ω/□ and at higher implant dose of 5E15/cm2 Rs was 120Ω/□. B requires temperatures >600°C for full activation in PMOS Ge channels, and generally results in minimal dopant diffusion for USJ.

Figure 1 shows a comparison between P, As, and Sb implanted dopants at 1E16/cm2 into both a Si wafer and 1µm Ge-epilayer on Si after various anneals. The sheet-resistance values for all three n-type dopants were always lower in Ge than in Si over the 625-900°C RTA range by about 5x for P and 10x for As and Sb. Another experiment to study the results for co-implants of P+Sb, P+C, and P+F using a Si-cap layer did not show any enhanced n-type dopant activation.

Fig.1: Sheet-resistance (Rs) versus RTA temperatures for P, As, and Sb implanted dopants into Ge and Si. (Source: Borland)

Prof. Saraswat of Stanford University showed in 2005—at the spring Materials Research Society meeting— that n-type activation in Ge is inherently difficult. In that same year, Borland was the lead author of an article in Solid State Technology (July 2005, p.45) entited, “Meeting challenges for engineering the gate stack”, in which the authors advocated for using a Si-cap for P implant to enable high temperature n-type dopant activation with minimal diffusion for shallow n+ Ge junctions that can be used for Ge nMOS. Now, almost 10 year later, Borland is able to show that it can be done.

Ge Channel Integration and Metrology

Nano-scale Ge channels wrapped around 3D fin structures will be difficult to form before they can be implanted. However, whether formed in a Replacement Metal Gate (RMG) or epitaxial-etchback process, one commonality is that Ge channels will need abrupt junctions to fit into shrunk device structures. Also, as device structures have continued to shrink, the junction formation challenges between “planar” devices and 3D finFET have converged since the “2D” structures now have nano-scale 3D topography.

Adam Brand, senior director of transistor technology in the Advanced Product Technology Development group of Applied Materials, explained that, “Heated beamline implants are best when the priority is precise dose and energy control without lattice damage. Plasma doping (PLAD) is best when the priority is to deliver a high dose and conformal implant.”

Ehud Tzuri, director strategic marketing in the Process Diagnostic and Metrology group at Applied Materials reminds us that control of the Ge material quality, as specified by data on the count and lengths of stacking-faults and other crystalline dislocations, could be done by X-Ray Diffraction (XRD) or by some new disruptive technology. Cross-section Transmission Electron Microscopy (X-TEM) is the definitive technology for looking at nanoscale material quality, but since it is expensive and the sample must be destroyed it cannot be used for process control.

Figure 2 shows X-TEM results for 1 µm thick Ge epi-layers after 625°C and 900°C RTA. Due to the intrinsic lattice mis-match between Ge and Si there will always be some defects at the surface, as indicated by arrows in the figure. However, stacking faults are clearly seen in the lower RTA sample, while the 900°C anneal shows no stacking-faults and so should result in superior integrated device performance.

Fig. 2: Cross-section TEM of 1µm Ge-epi after 625°C and 900°C RTA, showing great reduction in stacking-faults with the higher annealing temperature. (Source: Borland)

Borland explains that the stacking-faults in Ge channels on finFETs would protrude to the surface, and so could not be mitigated by the use of the “Aspect-Ratio Trapping” (ART) integration trick that has been investigated by imec. However, the use of a silicon-oxide cap allows for the use of 900°C RTA which is hot enough to anneal out the defects in the crystal.

Brand provides an example of why integration challenges of Ge channels include subtle considerations, “The most important consideration for USJ in the FinFET era is to scale down the channel body width to improve electrostatics. Germanium has a higher semiconductor dielectric constant than silicon so a slightly lower body width will be needed to reach the same gate length due to the capacitive coupling.”

Junction formation in Ge channels will be one of the nanoscale materials engineering challenges for future CMOS finFETs. Either XRD or some other metrology technology will be needed for control. Integration will include the need to control the materials on the top and the bottom surfaces of channels to ensure that dopant atoms activate without diffusing away. The remaining challenge is to develop the shortest RTA process possible to minimize all diffusions.

— E. K.

FinFET on SOI: Potential Becomes Reality

Thursday, December 5th, 2013

Authors: T. B. Hook, I. Ahsan, A. Kumar, K. McStay, E. Nowak, S. Saroop, C. Schiller, G. Starkey, IBM Semiconductor Research and Development Center

We report here empirical results demonstrating the electrical benefits of SOI-based FinFETs. There are benefits inherent in the elimination of dopant as the means to establish the effective device dimensions.  However, significant compromise is unavoidable when using doping as a means of isolation, as in bulk-based FinFETs.  Accordingly, we use SOI as the base on which to build the FinFET, which not only simplifies the process but enables full realization of the potential of the device.
Fully depleted transistor technologies – both planar and SOI-based FinFET – offer excellent circuit operation for SRAM and DRAM due to the unsurpassed threshold voltage matching associated with the near-absence of doping.   Additionally, good low voltage and stacked-fet circuit operation is realized due to the superior electrostatics associated with thin-body devices.  Hardware data specifically illustrating these features is described below.

Threshold voltage matching and distribution

A significant improvement in threshold voltage mismatch has been well documented, as well as the degradation associated with adding doping to a FinFET.  Less well publicized, however, is the even larger relative benefit to be found in thick-dielectric transistors, such as are used for analog and IO devices, and also in DRAM.

Random dopant fluctuation is not the only mechanism contributing to local threshold voltage mismatch, but it has historically been the largest contributor.  It has been an even larger contributor for thicker dielectrics, as its baleful influence scales directly with dielectric thickness, unlike work function variations for example.   Therefore an even more dramatic improvement in matching is found in thick-dielectric devices, as shown in Figure 1.

Figure 1. Mismatch data as a function of tinv for conventional doped (dotted line) and SOI FinFET (solid line). While the improvement in matching for ‘thin-oxide’ (1.2-1.5nm) is well known, less widely recognized is the even larger advantage obtained with ‘thick-oxide’ (>3nm) devices commonly used in IO and analog applications.

This improvement is important to IO and analog circuit operation and is vital to scaling the DRAM transfer device into the next generations.
In Figure 2 are shown probability plots of the threshold voltage for two DRAM transfer gate transistors and the profound improvement is obvious.   The FinFET version actually has a considerably thicker gate dielectric than the conventional doped device and a shorter gate yet much better matching.  The absence of thickness-driven matching opens up the device design space and enables optimization of the overall design, as well as allowing for the fundamental area scaling needed to move to the next generation.

Figure 2: Threshold voltage matching for DRAM transfer devices. Blue: 32nm generation thick oxide doping-controlled device. Red: 14nm generation thick oxide FinFET device. The FinFET device is shorter and has a thicker dielectric, yet the threshold voltage matching standard deviation is 0.7X that of the conventional planar doped version. This improvement is applicable also to other thick oxide devices, such as are used in IO and analog applications.

One of the most important benefits of improved matching is the much-desired reduction in the minimum operating voltage of the classic 6T SRAM.  While the transistor matching data clearly show an advantage, putting it all together into a quantized FinFET SRAM cell with correct beta and gamma ratios and device centering to actually achieve low Vmin is a larger challenge.
Additionally, there may be other factors present in the scaled-up SRAM array that may not be so evident in the classic Pelgrom analysis from which most matching data are derived, such as some perturbation to line-edge-roughness, or nfet/pfet interactions, or any number of other possibilities.

Our data demonstrate that these concerns are surmountable and that real SOI FinFET SRAMs can operate at very low voltages. Figure 3 shows remarkable results on an SRAM array, with full read and write operation down to 400mV, without any assist circuitry.  This is among the best results ever reported, even among those that utilize boost techniques and in-situ tuning of the devices.

Figure 3: Shmoo plot of 14nm SOI FinFET SRAM array showing a minimum operating voltage of 400mV, with full read and write capability. This result, as good or better than any yet reported, was obtained without benefit of the chip-specific tuning techniques associated with planar fully depleted devices or specialized independent double-gate FinFETs.

Low Voltage Circuit Operation
A considerable improvement in electrostatics associated with the FinFET over conventional doped devices not only enables the necessary gate-length scaling, but simultaneously improves the relative performance at reduced voltage and therefore reduces the power density at a given performance.  While fully-depleted devices should in principle enjoy this advantage, the introduction of non-uniformity such as is involved with the tapered fin profile associated with bulk-based FinFET seriously compromises the output conductance and may obviate these expectations, as shown in Figure 4.

Figure 4: Representative bulk-based and SOI-based fin profiles, and corresponding empirical degradation in electrostatics. The tapered shape of the bulk fin shown results in nonuniform current flow and poorer low-voltage operation and self-gain than the more ideally shaped SOI FinFET.

The fin profile obtainable in SOI-based FinFETs is very nearly ideal and our data show that the low voltage benefits are fully realized in hardware.  The frequencies of a suite of ring oscillator circuits (inverter, NANDs, and NORs) were measured on 14nm SOI-based FinFET hardware as a function of voltage and compared to the modeled expectations.
Figure 5 shows excellent correspondence with expectation, and also shows how the data are far superior to the voltage dependence of conventional planar technology.

Figure 5: Normalized frequency reduction as a function of Vdd for a suite of circuits (NANDs, NORs, and inverters). Near-perfect correspondence of the SOI FinFET data with the compact model is shown. This flatter voltage dependence is highly superior to that typical of doping-controlled planar technology.

Several key elements of the putative advantages of FinFETs over conventional devices have been demonstrated in hardware.  By using SOI-based FinFET technology, the need for doping in the body has been effectively minimized, resulting in excellent matching characteristics in the undoped DRAM transfer device, and truly remarkable minimum operating voltage in the SRAM.  Additionally, the superior voltage dependence and stacked-fet circuit behavior relative to conventional devices has also been demonstrated through measurements of ring oscillators of various sorts.