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	<title>Comments on: Experts At The Table: Stacked Die Reality Check</title>
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	<link>http://semimd.com/blog/2012/09/10/experts-at-the-table-stacked-die-reality-check-3/</link>
	<description>Deep Insights for Chip Builders</description>
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		<title>By: Dev Gupta</title>
		<link>http://semimd.com/blog/2012/09/10/experts-at-the-table-stacked-die-reality-check-3/#comment-30238</link>
		<dc:creator>Dev Gupta</dc:creator>
		<pubDate>Tue, 11 Sep 2012 16:17:26 +0000</pubDate>
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		<description>2.5 D modules are merely updated versions of  MCMs using Si - substrate that had been used by IBM in mainframes etc. many years ago. The major difference in 2.5 D today are the use of micro - bumps and substrates w/ TSVs &amp; buried caps. But the design / business rationale  still remain the same : partitioning a large chip with too many transistors into a number of chips so as to reduce yield loss while at the same time integrate them at the substrate level w/o too much of a penalty in inter - chip delays by using fine pitch / area - array / low - loss interconnects. But MCMs did not become widespread as Intel could afford to stay on Moores&#039;s law for CMOS single chip microprocessors ( always cheaper than MCMs if you have the volume ). Regardless of all the process development effort in Packaging, history might repeat itself for 2.5 D ( not to menton 3-D ) for high volume chips at least thru 14 nm. As to the feared &quot;Memory Wall&quot; there are now more elegant ways to increase bandwidth than drilling holes ( TSVs ) in semi - finished wafers.</description>
		<content:encoded><![CDATA[<p>2.5 D modules are merely updated versions of  MCMs using Si &#8211; substrate that had been used by IBM in mainframes etc. many years ago. The major difference in 2.5 D today are the use of micro &#8211; bumps and substrates w/ TSVs &amp; buried caps. But the design / business rationale  still remain the same : partitioning a large chip with too many transistors into a number of chips so as to reduce yield loss while at the same time integrate them at the substrate level w/o too much of a penalty in inter &#8211; chip delays by using fine pitch / area &#8211; array / low &#8211; loss interconnects. But MCMs did not become widespread as Intel could afford to stay on Moores&#8217;s law for CMOS single chip microprocessors ( always cheaper than MCMs if you have the volume ). Regardless of all the process development effort in Packaging, history might repeat itself for 2.5 D ( not to menton 3-D ) for high volume chips at least thru 14 nm. As to the feared &#8220;Memory Wall&#8221; there are now more elegant ways to increase bandwidth than drilling holes ( TSVs ) in semi &#8211; finished wafers.</p>
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