Comments on: What Comes After FinFETs? http://semimd.com/blog/2012/08/15/what-comes-after-finfets/ Deep Insights for Chip Builders Thu, 25 Apr 2013 16:16:36 +0000 hourly 1 http://wordpress.org/?v= By: Sam Zhang http://semimd.com/blog/2012/08/15/what-comes-after-finfets/#comment-29754 Sam Zhang Mon, 27 Aug 2012 17:36:04 +0000 http://semimd.com/?p=6553#comment-29754 5nm FinFet will be out of pic at least till 2016 when EUV is starting to get mature a little bit. III-V EPI based 10nm FinFet will be the next generation to solve the junction engineering challenges & enhance the channel mobility. 5nm FinFet will be out of pic at least till 2016 when EUV is starting to get mature a little bit.

III-V EPI based 10nm FinFet will be the next generation to solve the junction engineering challenges & enhance the channel mobility.

]]> By: m jin http://semimd.com/blog/2012/08/15/what-comes-after-finfets/#comment-29432 m jin Fri, 17 Aug 2012 09:01:06 +0000 http://semimd.com/?p=6553#comment-29432 The shrinking roadmap is to be continued on TFETs, nanowire FETs and GAA. Neither CNFET or graphene offers too much benefit to conventional approaches. Please have a look at the history. The movement from pnp transistor to field effect transistor effectively changed the driving method from (base) current to (gate) voltage. Today, as device size is less than several hundred A, the voltage driving method becomes a major bottleneck. It is the time for revolution. Instead of replacing semiconductor material, why not change the method to drive a transistor?! I am proposing these years on a CHARGE-driven advance transistor, which is c.f. my research on MOSFET. Should you like to learn details please feel free to contact me. Cheers. The shrinking roadmap is to be continued on TFETs, nanowire FETs and GAA. Neither CNFET or graphene offers too much benefit to conventional approaches.

Please have a look at the history. The movement from pnp transistor to field effect transistor effectively changed the driving method from (base) current to (gate) voltage. Today, as device size is less than several hundred A, the voltage driving method becomes a major bottleneck.

It is the time for revolution. Instead of replacing semiconductor material, why not change the method to drive a transistor?! I am proposing these years on a CHARGE-driven advance transistor, which is c.f. my research on MOSFET.

Should you like to learn details please feel free to contact me. Cheers.

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